Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering
CdIn2O4 thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. Th...
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| Veröffentlicht in: | Applied surface science 2008-06, Vol.254 (17), p.5481-5486 |
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| creator | YANG, F. F FANG, L ZHANG, S. F SUN, J. S XU, Q. T WU, S. Y DONG, J. X KONG, C. Y |
| description | CdIn2O4 thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn2O4 thin films with uniform and dense surface morphology contain mainly CdIn2O4, In2O3 phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 X 10-4 Omega cm and the Hall mobility is as high as 60.32 cm2/V s. Annealing treatment can improve the electrical performance of the films. |
| doi_str_mv | 10.1016/j.apsusc.2008.02.090 |
| format | Article |
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F ; FANG, L ; ZHANG, S. F ; SUN, J. S ; XU, Q. T ; WU, S. Y ; DONG, J. X ; KONG, C. Y</creator><creatorcontrib>YANG, F. F ; FANG, L ; ZHANG, S. F ; SUN, J. S ; XU, Q. T ; WU, S. Y ; DONG, J. X ; KONG, C. Y</creatorcontrib><description>CdIn2O4 thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn2O4 thin films with uniform and dense surface morphology contain mainly CdIn2O4, In2O3 phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 X 10-4 Omega cm and the Hall mobility is as high as 60.32 cm2/V s. 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The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn2O4 thin films with uniform and dense surface morphology contain mainly CdIn2O4, In2O3 phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 X 10-4 Omega cm and the Hall mobility is as high as 60.32 cm2/V s. 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F</creatorcontrib><creatorcontrib>FANG, L</creatorcontrib><creatorcontrib>ZHANG, S. F</creatorcontrib><creatorcontrib>SUN, J. S</creatorcontrib><creatorcontrib>XU, Q. T</creatorcontrib><creatorcontrib>WU, S. Y</creatorcontrib><creatorcontrib>DONG, J. X</creatorcontrib><creatorcontrib>KONG, C. Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YANG, F. F</au><au>FANG, L</au><au>ZHANG, S. F</au><au>SUN, J. S</au><au>XU, Q. T</au><au>WU, S. Y</au><au>DONG, J. X</au><au>KONG, C. Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering</atitle><jtitle>Applied surface science</jtitle><date>2008-06-30</date><risdate>2008</risdate><volume>254</volume><issue>17</issue><spage>5481</spage><epage>5486</epage><pages>5481-5486</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>CdIn2O4 thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn2O4 thin films with uniform and dense surface morphology contain mainly CdIn2O4, In2O3 phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 X 10-4 Omega cm and the Hall mobility is as high as 60.32 cm2/V s. Annealing treatment can improve the electrical performance of the films.</abstract><cop>Amsterdam</cop><pub>Elsevier Science</pub><doi>10.1016/j.apsusc.2008.02.090</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering |
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