Planar Hall Effect and Magnetic Anisotropy in a Mn δ-doped GaAs/p-AlGaAs Heterostructure

We have studied the planar Hall effect (PHE) in a Mn δ‐doped GaAs‐based heterostructure consisting of Mn δ‐doped GaAs and p‐type AlGaAs. Distinct and large PHE, and a specific in‐plane uniaxial magnetic anisotropy were observed below the ferromagnetic transition temperature (TC). This uniaxial in‐pl...

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Veröffentlicht in:	IEEJ transactions on electrical and electronic engineering 2008-07, Vol.3 (4), p.394-398
Hauptverfasser:	Nazmul, Ahsan M., Lin, Hung-Ta, Ohya, Shinobu, Tanaka, Masaaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electronics Exact sciences and technology magnetic anisotropy Mn δ-doping planar hall effect Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices semiconductor heterostructure
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