Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA l...
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Veröffentlicht in: | Microelectronic engineering 2008-05, Vol.85 (5-6), p.814-817 |
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Format: | Artikel |
Sprache: | eng |
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