Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process

A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA l...

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Veröffentlicht in:Microelectronic engineering 2008-05, Vol.85 (5-6), p.814-817
Hauptverfasser: Yang, Haifang, Jin, Aizi, Luo, Qiang, Li, Junjie, Gu, Changzhi, Cui, Zheng
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Sprache:eng
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