Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA l...
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Veröffentlicht in: | Microelectronic engineering 2008-05, Vol.85 (5-6), p.814-817 |
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container_title | Microelectronic engineering |
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creator | Yang, Haifang Jin, Aizi Luo, Qiang Li, Junjie Gu, Changzhi Cui, Zheng |
description | A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced. |
doi_str_mv | 10.1016/j.mee.2008.01.006 |
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Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2008.01.006</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Electron beam lithography ; Electronics ; Exact sciences and technology ; HSQ/PMMA bilayer resist ; Microelectronic fabrication (materials and surfaces technology) ; Negative tone lift-off ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced.</description><subject>Applied sciences</subject><subject>Electron beam lithography</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HSQ/PMMA bilayer resist</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Negative tone lift-off</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Haifang</creatorcontrib><creatorcontrib>Jin, Aizi</creatorcontrib><creatorcontrib>Luo, Qiang</creatorcontrib><creatorcontrib>Li, Junjie</creatorcontrib><creatorcontrib>Gu, Changzhi</creatorcontrib><creatorcontrib>Cui, Zheng</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Haifang</au><au>Jin, Aizi</au><au>Luo, Qiang</au><au>Li, Junjie</au><au>Gu, Changzhi</au><au>Cui, Zheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process</atitle><jtitle>Microelectronic engineering</jtitle><date>2008-05-01</date><risdate>2008</risdate><volume>85</volume><issue>5-6</issue><spage>814</spage><epage>817</epage><pages>814-817</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2008.01.006</doi><tpages>4</tpages></addata></record> |
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subjects | Applied sciences Electron beam lithography Electronics Exact sciences and technology HSQ/PMMA bilayer resist Microelectronic fabrication (materials and surfaces technology) Negative tone lift-off Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process |
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