Direct Al–Al contact using low temperature wafer bonding for integrating MEMS and CMOS devices

This paper investigates the feasibility of direct Al–Al contact using low temperature wafer bonding process for the integration of MEMS and CMOS devices. Sufficient mechanical strength oxide–oxide bonds can be achieved using an oxygen plasma assisted low temperature wafer bonding process, with Al st...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Microelectronic engineering 2008-05, Vol.85 (5-6), p.1059-1061
Hauptverfasser:	Lin, H., Stevenson, J.T.M., Gundlach, A.M., Dunare, C.C., Walton, A.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Al interconnect Applied sciences CMOS–MEMS integration Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Micro- and nanoelectromechanical devices (mems/nems) Microelectronic fabrication (materials and surfaces technology) Plasma assisted wafer bonding Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!