Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching

An analysis, based on angle-resolved X-ray photoelectron spectroscopy, multiple-internal-reflection infrared spectroscopy, and atomic force microscopy, of device-quality (1 0 0)silicon surfaces after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied surface science 2008-07, Vol.254 (18), p.5781-5790
Hauptverfasser:	CEROFOLINI, G. F, GIUSSANI, A, MODELLI, A, MASCOLO, D, RUGGIERO, D, NARDUCCI, D, ROMANO, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Clean metal, semiconductor, and insulator surfaces Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electron and ion emission by liquids and solids impact phenomena Elemental semiconductors and insulators Exact sciences and technology Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoemission and photoelectron spectra Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!