The dopant concentration and annealing temperature dependence of ferromagnetism in Co-doped ZnO thin films

A series of Zn 1− x Co x O thin films with the atomic fraction, x, in the range of 0.03–0.10 were deposited on glass substrates at room temperature by magnetron co-sputtering technique and subsequently coupled with the post-annealing treatment for half hour at different temperatures (350 °C and 500...

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Veröffentlicht in:Applied surface science 2008-06, Vol.254 (16), p.4956-4960
Hauptverfasser: Xu, Xiao-Hong, Qin, Xiu-Fang, Jiang, Feng-Xian, Li, Xiao-Li, Chen, Ya, Gehring, G.A.
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Sprache:eng
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