Hybrid reflections in InGaP/GaAs(001) by synchrotron radiation multiple diffraction

Hybrid reflections (HRs) involving substrate and layer planes (SL type) [Morelhão et al., Appl. Phys. Lett. 73 (15), 2194 (1998)] observed in Chemical Beam Epitaxy (CBE) grown InGaP/GaAs(001) structures were used as a three‐dimensional probe to analyze structural properties of epitaxial layers. A set of (002) rocking curves (ω ‐scan) measured for each 15° in the azimuthal plane was arranged in a pole diagram in ϕ for two samples with different layer thicknesses (#A – 58 nm and #B – 370 nm) and this allowed us to infer the azimuthal epilayer homogeneity in both samples. Also, it was shown the occurrence of (1$ \bar 1 $3) HR detected even in the thinner layer sample. Mappings of the HR diffraction condition (ω:ϕ) allowed to observe the crystal truncation rod through the elongation of HR shape along the substrate secondary reflection streak which can indicate in‐plane match of layer/ substrate lattice parameters. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)