Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping
This paper reviews the physics and the potential application of ion-implanted vacancies for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating implants prior to boron implantation, electrically active boron concentrations approaching 1021 cm-3 can...
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| Veröffentlicht in: | Materials science forum 2008-03, Vol.573-574, p.295-304 |
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| container_title | Materials science forum |
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| creator | Colombeau, Benjamin Cowern, Nicholas E.B. Sealy, Brian J. Smith, Andrew J. Lerch, Wilfried Bennett, Nicholas S. Paul, Silke Pakfar, Ardechir Webb, Roger P. Gwilliam, Russell |
| description | This paper reviews the physics and the potential application of ion-implanted vacancies
for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating
implants prior to boron implantation, electrically active boron concentrations
approaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, without
the use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering
implants (VEI) are activated far above solubility. Furthermore, in the case of appropriately
engineered thin silicon films, this activation is stable with respect to deactivation and the doping
profile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant with
decreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches at
the ‘32 nm node’ and beyond. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.573-574.295 |
| format | Article |
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for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating
implants prior to boron implantation, electrically active boron concentrations
approaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, without
the use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering
implants (VEI) are activated far above solubility. Furthermore, in the case of appropriately
engineered thin silicon films, this activation is stable with respect to deactivation and the doping
profile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant with
decreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches at
the ‘32 nm node’ and beyond.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.573-574.295</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2008-03, Vol.573-574, p.295-304</ispartof><rights>2008 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2865-e1b545039e6529bc6c79912e4bac52b3fce57f5a81ab6c1ae3ac42217528b0fc3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/722?width=600</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Colombeau, Benjamin</creatorcontrib><creatorcontrib>Cowern, Nicholas E.B.</creatorcontrib><creatorcontrib>Sealy, Brian J.</creatorcontrib><creatorcontrib>Smith, Andrew J.</creatorcontrib><creatorcontrib>Lerch, Wilfried</creatorcontrib><creatorcontrib>Bennett, Nicholas S.</creatorcontrib><creatorcontrib>Paul, Silke</creatorcontrib><creatorcontrib>Pakfar, Ardechir</creatorcontrib><creatorcontrib>Webb, Roger P.</creatorcontrib><creatorcontrib>Gwilliam, Russell</creatorcontrib><title>Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping</title><title>Materials science forum</title><description>This paper reviews the physics and the potential application of ion-implanted vacancies
for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating
implants prior to boron implantation, electrically active boron concentrations
approaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, without
the use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering
implants (VEI) are activated far above solubility. Furthermore, in the case of appropriately
engineered thin silicon films, this activation is stable with respect to deactivation and the doping
profile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant with
decreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches at
the ‘32 nm node’ and beyond.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqVkNtKAzEQhoMoWA_vkCsFYdcku9nDpbbVFipeeLgN2ThpI9ukJlmKd76Db-iTGKngtRfDDMzPP_N_CF1QkpeENZfb7TYPyoCNRhuVW4iXdw83Oa-LjNdlzlq-h0a0qljW1pztoxFhnGe8rKtDdBTCKyEFbWg1QsOzVNKqdzy1S2MBvLFL_PXxia8sfuqjl9nCbfHjCvxa9vh6eFlCxHcQV-4Fa-fxzCxX2dhZlV7xMhpn8fnEaD2ENPYQwjmerze9tHG3nLhNunCCDrTsA5z-9mP0dDN9HM-yxf3tfHy1yBRrKp4B7XjJSdFCxVnbqUrVbUsZlJ1UnHWFVsBrzWVDZVcpKqGQqmSMpshNR7QqjtHZznfj3dsAIYq1CQr69A-4IYiioC3nlCTh9U6ovAvBgxYbb9bSvwtKxA9xkYiLP-IiEReJuEjEU5UiEU8mk51JImFDBLUSr27wNiX8j8035oeWuQ</recordid><startdate>20080324</startdate><enddate>20080324</enddate><creator>Colombeau, Benjamin</creator><creator>Cowern, Nicholas E.B.</creator><creator>Sealy, Brian J.</creator><creator>Smith, Andrew J.</creator><creator>Lerch, Wilfried</creator><creator>Bennett, Nicholas S.</creator><creator>Paul, Silke</creator><creator>Pakfar, Ardechir</creator><creator>Webb, Roger P.</creator><creator>Gwilliam, Russell</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080324</creationdate><title>Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping</title><author>Colombeau, Benjamin ; Cowern, Nicholas E.B. ; Sealy, Brian J. ; Smith, Andrew J. ; Lerch, Wilfried ; Bennett, Nicholas S. ; Paul, Silke ; Pakfar, Ardechir ; Webb, Roger P. ; Gwilliam, Russell</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2865-e1b545039e6529bc6c79912e4bac52b3fce57f5a81ab6c1ae3ac42217528b0fc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Colombeau, Benjamin</creatorcontrib><creatorcontrib>Cowern, Nicholas E.B.</creatorcontrib><creatorcontrib>Sealy, Brian J.</creatorcontrib><creatorcontrib>Smith, Andrew J.</creatorcontrib><creatorcontrib>Lerch, Wilfried</creatorcontrib><creatorcontrib>Bennett, Nicholas S.</creatorcontrib><creatorcontrib>Paul, Silke</creatorcontrib><creatorcontrib>Pakfar, Ardechir</creatorcontrib><creatorcontrib>Webb, Roger P.</creatorcontrib><creatorcontrib>Gwilliam, Russell</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Colombeau, Benjamin</au><au>Cowern, Nicholas E.B.</au><au>Sealy, Brian J.</au><au>Smith, Andrew J.</au><au>Lerch, Wilfried</au><au>Bennett, Nicholas S.</au><au>Paul, Silke</au><au>Pakfar, Ardechir</au><au>Webb, Roger P.</au><au>Gwilliam, Russell</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping</atitle><jtitle>Materials science forum</jtitle><date>2008-03-24</date><risdate>2008</risdate><volume>573-574</volume><spage>295</spage><epage>304</epage><pages>295-304</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>This paper reviews the physics and the potential application of ion-implanted vacancies
for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating
implants prior to boron implantation, electrically active boron concentrations
approaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, without
the use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering
implants (VEI) are activated far above solubility. Furthermore, in the case of appropriately
engineered thin silicon films, this activation is stable with respect to deactivation and the doping
profile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant with
decreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches at
the ‘32 nm node’ and beyond.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.573-574.295</doi><tpages>10</tpages></addata></record> |
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| title | Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping |
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