Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI
SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP were analyzed. A...
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| Veröffentlicht in: | Key engineering materials 2008-01, Vol.373-374, p.798-801 |
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| creator | Yuan, J.Y. Liu, Yu Ling Shi, H.L. Tan, Bai Mei Niu, X.H. Cui, Chun Xiang |
| description | SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical
planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and
the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP
were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation
agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no
contamination, low viscidity, proper hardness and easy to clean. The effect of different
concentration of abrasive on the removal rate and surface performance were studied. Further more
the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final
planarization was realized. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.373-374.798 |
| format | Article |
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planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and
the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP
were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation
agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no
contamination, low viscidity, proper hardness and easy to clean. The effect of different
concentration of abrasive on the removal rate and surface performance were studied. Further more
the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final
planarization was realized.</description><identifier>ISSN: 1013-9826</identifier><identifier>ISSN: 1662-9795</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.373-374.798</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Key engineering materials, 2008-01, Vol.373-374, p.798-801</ispartof><rights>2008 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-c11396c75ff7ac8523fc6e5a72dd7a26c37134226e30be358ccb2bac3d0bb2ec3</citedby><cites>FETCH-LOGICAL-c371t-c11396c75ff7ac8523fc6e5a72dd7a26c37134226e30be358ccb2bac3d0bb2ec3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/27?width=600</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yuan, J.Y.</creatorcontrib><creatorcontrib>Liu, Yu Ling</creatorcontrib><creatorcontrib>Shi, H.L.</creatorcontrib><creatorcontrib>Tan, Bai Mei</creatorcontrib><creatorcontrib>Niu, X.H.</creatorcontrib><creatorcontrib>Cui, Chun Xiang</creatorcontrib><title>Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI</title><title>Key engineering materials</title><description>SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical
planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and
the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP
were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation
agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no
contamination, low viscidity, proper hardness and easy to clean. The effect of different
concentration of abrasive on the removal rate and surface performance were studied. Further more
the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final
planarization was realized.</description><issn>1013-9826</issn><issn>1662-9795</issn><issn>1662-9795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqVkE1Lw0AQhoMoWKv_YU8ehKT7kWSTo7Zqiy0Kac_LZrKLW9Kk7m6o_fduqeDZw_DO4eFl5omiB4KTFNNicjgcEgdGdd5oA0mn_OTteZUwzmLG04SXxUU0InlO45KX2WXYMWFxWdD8OrpxbosxIwXJRtG88kNzRH2HpqsPVLWDtUckuwatFXx25mtQqNeoMq2BwMxM_20aFVK1Crw1gHRv0WZZLW6jKy1bp-5-cxxtXp7X03m8fH9dTB-XMTBOfAyEsDIHnmnNJRQZZRpylUlOm4ZLmp8ollKaK4ZrxbICoKa1BNbguqYK2Di6P_fubR-uc17sjAPVtrJT_eAEY4Sz8HkAn84g2N45q7TYW7OT9igIFieJIkgUfxJFkCiCRBEkhklFkBhKZucSb2XnfHAitv1gu_Dhf2p-AEUYhRA</recordid><startdate>20080101</startdate><enddate>20080101</enddate><creator>Yuan, J.Y.</creator><creator>Liu, Yu Ling</creator><creator>Shi, H.L.</creator><creator>Tan, Bai Mei</creator><creator>Niu, X.H.</creator><creator>Cui, Chun Xiang</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080101</creationdate><title>Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI</title><author>Yuan, J.Y. ; Liu, Yu Ling ; Shi, H.L. ; Tan, Bai Mei ; Niu, X.H. ; Cui, Chun Xiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-c11396c75ff7ac8523fc6e5a72dd7a26c37134226e30be358ccb2bac3d0bb2ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yuan, J.Y.</creatorcontrib><creatorcontrib>Liu, Yu Ling</creatorcontrib><creatorcontrib>Shi, H.L.</creatorcontrib><creatorcontrib>Tan, Bai Mei</creatorcontrib><creatorcontrib>Niu, X.H.</creatorcontrib><creatorcontrib>Cui, Chun Xiang</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Key engineering materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yuan, J.Y.</au><au>Liu, Yu Ling</au><au>Shi, H.L.</au><au>Tan, Bai Mei</au><au>Niu, X.H.</au><au>Cui, Chun Xiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI</atitle><jtitle>Key engineering materials</jtitle><date>2008-01-01</date><risdate>2008</risdate><volume>373-374</volume><spage>798</spage><epage>801</epage><pages>798-801</pages><issn>1013-9826</issn><issn>1662-9795</issn><eissn>1662-9795</eissn><abstract>SiO2 is a kind of widely used dielectric material in ULSI and its chemical mechanical
planarization (CMP) is one of the most difficult processes. In this paper, the CMP mechanism and
the effect of abrasive on SiO2 dielectric were analyzed; the different factors of affecting the CMP
were analyzed. A kind of organic alkali was chosen to act as the pH regulator and complexation
agent to enhance the chemical effect. The silica sol was selected as abrasive to realize no
contamination, low viscidity, proper hardness and easy to clean. The effect of different
concentration of abrasive on the removal rate and surface performance were studied. Further more
the influence of polishing slurry flow and surfactant on removal rate were analyzed. The final
planarization was realized.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/KEM.373-374.798</doi><tpages>4</tpages></addata></record> |
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| title | Study on CMP Slurry and Technique of Silicon Dioxide Dielectric for ULSI |
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