A systematic study of the electron mobility in V-shaped quantum wires at low temperatures
We present a systematic study of the electron mobility in V-shaped AlGaAs/GaAs quantum wires taking into account the impurity (background, remote and interface) and the acoustic-phonon scattering. The electron scattering rates are calculated for wires with electron concentrations up to 10 6 cm −1 an...
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Veröffentlicht in: | Superlattices and microstructures 2008-04, Vol.43 (4), p.340-351 |
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creator | Tsetseri, Maria Triberis, Georgios P. Tsaousidou, Margarita |
description | We present a systematic study of the electron mobility in V-shaped AlGaAs/GaAs quantum wires taking into account the impurity (background, remote and interface) and the acoustic-phonon scattering. The electron scattering rates are calculated for wires with electron concentrations up to 10
6 cm
−1 and temperatures up to 40 K by using Fermi’s golden rule. The effects of the interface roughness scattering and the alloy scattering are also discussed. The energy eigenstates and eigenvalues of the system under study are calculated using a finite difference method. We analyze the importance of each scattering mechanism on the mobility of several quantum wires of different qualities as a function of the electron concentration and the temperature. |
doi_str_mv | 10.1016/j.spmi.2008.01.010 |
format | Article |
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6 cm
−1 and temperatures up to 40 K by using Fermi’s golden rule. The effects of the interface roughness scattering and the alloy scattering are also discussed. The energy eigenstates and eigenvalues of the system under study are calculated using a finite difference method. We analyze the importance of each scattering mechanism on the mobility of several quantum wires of different qualities as a function of the electron concentration and the temperature.</description><identifier>ISSN: 0749-6036</identifier><identifier>EISSN: 1096-3677</identifier><identifier>DOI: 10.1016/j.spmi.2008.01.010</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Mobility ; Quantum wires ; V-shaped QWRs</subject><ispartof>Superlattices and microstructures, 2008-04, Vol.43 (4), p.340-351</ispartof><rights>2008 Elsevier Ltd</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-448e6ec89336069f531258ebc65522a8ba89cba610611ce4c16fec9dbb2b6a7e3</citedby><cites>FETCH-LOGICAL-c331t-448e6ec89336069f531258ebc65522a8ba89cba610611ce4c16fec9dbb2b6a7e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.spmi.2008.01.010$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>Tsetseri, Maria</creatorcontrib><creatorcontrib>Triberis, Georgios P.</creatorcontrib><creatorcontrib>Tsaousidou, Margarita</creatorcontrib><title>A systematic study of the electron mobility in V-shaped quantum wires at low temperatures</title><title>Superlattices and microstructures</title><description>We present a systematic study of the electron mobility in V-shaped AlGaAs/GaAs quantum wires taking into account the impurity (background, remote and interface) and the acoustic-phonon scattering. The electron scattering rates are calculated for wires with electron concentrations up to 10
6 cm
−1 and temperatures up to 40 K by using Fermi’s golden rule. The effects of the interface roughness scattering and the alloy scattering are also discussed. The energy eigenstates and eigenvalues of the system under study are calculated using a finite difference method. We analyze the importance of each scattering mechanism on the mobility of several quantum wires of different qualities as a function of the electron concentration and the temperature.</description><subject>Mobility</subject><subject>Quantum wires</subject><subject>V-shaped QWRs</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9UMtqwzAQFKWFpo8f6Emn3uyuLEe2oZcQ-oJAL22hJyHLa6JgW44kN_jvq5CeCwMDy8wsM4TcMUgZMPGwS_3YmzQDKFNgEXBGFgwqkXBRFOdkAUVeJQK4uCRX3u8AoMpZsSDfK-pnH7BXwWjqw9TM1LY0bJFihzo4O9De1qYzYaZmoF-J36oRG7qf1BCmnh6MQ09VoJ090JgzolNhircbctGqzuPtH1-Tz-enj_Vrsnl_eVuvNonmnIUkz0sUqMuKcwGiapecZcsSay2WyyxTZa3KStdKMBCMacw1Ey3qqqnrrBaqQH5N7k-5o7P7CX2QvfEau04NaCcv45cCSsajMDsJtbPeO2zl6Eyv3CwZyOOKciePK8rjihJYBETT48mEscKPQSe9NjhobGJvHWRjzX_2X-XkfJ8</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Tsetseri, Maria</creator><creator>Triberis, Georgios P.</creator><creator>Tsaousidou, Margarita</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080401</creationdate><title>A systematic study of the electron mobility in V-shaped quantum wires at low temperatures</title><author>Tsetseri, Maria ; Triberis, Georgios P. ; Tsaousidou, Margarita</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-448e6ec89336069f531258ebc65522a8ba89cba610611ce4c16fec9dbb2b6a7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Mobility</topic><topic>Quantum wires</topic><topic>V-shaped QWRs</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsetseri, Maria</creatorcontrib><creatorcontrib>Triberis, Georgios P.</creatorcontrib><creatorcontrib>Tsaousidou, Margarita</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsetseri, Maria</au><au>Triberis, Georgios P.</au><au>Tsaousidou, Margarita</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A systematic study of the electron mobility in V-shaped quantum wires at low temperatures</atitle><jtitle>Superlattices and microstructures</jtitle><date>2008-04-01</date><risdate>2008</risdate><volume>43</volume><issue>4</issue><spage>340</spage><epage>351</epage><pages>340-351</pages><issn>0749-6036</issn><eissn>1096-3677</eissn><abstract>We present a systematic study of the electron mobility in V-shaped AlGaAs/GaAs quantum wires taking into account the impurity (background, remote and interface) and the acoustic-phonon scattering. The electron scattering rates are calculated for wires with electron concentrations up to 10
6 cm
−1 and temperatures up to 40 K by using Fermi’s golden rule. The effects of the interface roughness scattering and the alloy scattering are also discussed. The energy eigenstates and eigenvalues of the system under study are calculated using a finite difference method. We analyze the importance of each scattering mechanism on the mobility of several quantum wires of different qualities as a function of the electron concentration and the temperature.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.spmi.2008.01.010</doi><tpages>12</tpages></addata></record> |
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subjects | Mobility Quantum wires V-shaped QWRs |
title | A systematic study of the electron mobility in V-shaped quantum wires at low temperatures |
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