Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate

We report the characteristics of GaN‐based light‐emitting diode (LED) grown on a circular convex patterned sapphire substrate (CCPSS) and conventional LEDs on a non‐patterned sapphire substrate (PSS) by metal‐organic chemical vapor deposition. A near field scanning optical microscope (NSOM) and micr...

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Veröffentlicht in:	Physica status solidi. C 2009-02, Vol.6 (2), p.589-592
Hauptverfasser:	Oh, Tae Su, Lee, Yong Seok, Jeong, Hyun, Kim, Jan Di, Seo, Tae Hun, Suh, Eun-Kyung
Format:	Artikel
Sprache:	eng
Schlagworte:	68.37.Uv 78.30.Fs 81.15.Gh 85.60.Jb
Online-Zugang:	Volltext
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