Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate
We report the characteristics of GaN‐based light‐emitting diode (LED) grown on a circular convex patterned sapphire substrate (CCPSS) and conventional LEDs on a non‐patterned sapphire substrate (PSS) by metal‐organic chemical vapor deposition. A near field scanning optical microscope (NSOM) and micr...
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| Veröffentlicht in: | Physica status solidi. C 2009-02, Vol.6 (2), p.589-592 |
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| creator | Oh, Tae Su Lee, Yong Seok Jeong, Hyun Kim, Jan Di Seo, Tae Hun Suh, Eun-Kyung |
| description | We report the characteristics of GaN‐based light‐emitting diode (LED) grown on a circular convex patterned sapphire substrate (CCPSS) and conventional LEDs on a non‐patterned sapphire substrate (PSS) by metal‐organic chemical vapor deposition. A near field scanning optical microscope (NSOM) and micro Raman spectroscopy were employed to investigate the crystalline properties. In NSOM image and spectra of LED on CCPSS, an improved crystalline quality with emission fluctuation feature on the trench region was obtained. However, stress relaxation in this trench region was not achieved due to the presence of voids, indicating a stress concentration at the coalescence region. Compared to conventional LED on non‐PSS, increased internal quantum efficiency (IQE) (41.8%) and reduced leakage currents (40 nA at ‐10 V) were observed in the LED fabricated on CCPSS. The light output power of the LED on CCPSS was approximately two times higher than that of a conventional LED. This enhancement of output power is contributed to increase of IQE and the effective suppression of leakage current by reduction of dislocation density, as well as enhanced light scattering via the circular convex facets. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200880409 |
| format | Article |
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A near field scanning optical microscope (NSOM) and micro Raman spectroscopy were employed to investigate the crystalline properties. In NSOM image and spectra of LED on CCPSS, an improved crystalline quality with emission fluctuation feature on the trench region was obtained. However, stress relaxation in this trench region was not achieved due to the presence of voids, indicating a stress concentration at the coalescence region. Compared to conventional LED on non‐PSS, increased internal quantum efficiency (IQE) (41.8%) and reduced leakage currents (40 nA at ‐10 V) were observed in the LED fabricated on CCPSS. The light output power of the LED on CCPSS was approximately two times higher than that of a conventional LED. This enhancement of output power is contributed to increase of IQE and the effective suppression of leakage current by reduction of dislocation density, as well as enhanced light scattering via the circular convex facets. (© 2009 WILEY‐VCH Verlag GmbH & Co. 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The light output power of the LED on CCPSS was approximately two times higher than that of a conventional LED. This enhancement of output power is contributed to increase of IQE and the effective suppression of leakage current by reduction of dislocation density, as well as enhanced light scattering via the circular convex facets. (© 2009 WILEY‐VCH Verlag GmbH & Co. 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C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oh, Tae Su</au><au>Lee, Yong Seok</au><au>Jeong, Hyun</au><au>Kim, Jan Di</au><au>Seo, Tae Hun</au><au>Suh, Eun-Kyung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi (c)</addtitle><date>2009-02</date><risdate>2009</risdate><volume>6</volume><issue>2</issue><spage>589</spage><epage>592</epage><pages>589-592</pages><issn>1862-6351</issn><issn>1610-1634</issn><eissn>1610-1642</eissn><abstract>We report the characteristics of GaN‐based light‐emitting diode (LED) grown on a circular convex patterned sapphire substrate (CCPSS) and conventional LEDs on a non‐patterned sapphire substrate (PSS) by metal‐organic chemical vapor deposition. A near field scanning optical microscope (NSOM) and micro Raman spectroscopy were employed to investigate the crystalline properties. In NSOM image and spectra of LED on CCPSS, an improved crystalline quality with emission fluctuation feature on the trench region was obtained. However, stress relaxation in this trench region was not achieved due to the presence of voids, indicating a stress concentration at the coalescence region. Compared to conventional LED on non‐PSS, increased internal quantum efficiency (IQE) (41.8%) and reduced leakage currents (40 nA at ‐10 V) were observed in the LED fabricated on CCPSS. The light output power of the LED on CCPSS was approximately two times higher than that of a conventional LED. This enhancement of output power is contributed to increase of IQE and the effective suppression of leakage current by reduction of dislocation density, as well as enhanced light scattering via the circular convex facets. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200880409</doi><tpages>4</tpages></addata></record> |
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| subjects | 68.37.Uv 78.30.Fs 81.15.Gh 85.60.Jb |
| title | Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate |
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