Novel Cu/Cr/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs

The thermal stability of the Cu/Cr/Ge/Pd/n + -GaAs contact structure was evaluated. In this structure, a thin 40 nm layer of chromium was deposited as a diffusion barrier to block copper diffusion into GaAs. After thermal annealing at 350°C, the specific contact resistance of the copper-based ohmic...

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Veröffentlicht in:	Journal of electronic materials 2008-06, Vol.37 (6), p.901-904
Hauptverfasser:	Sahoo, Kartika Chandra, Chang, Chun-Wei, Wong, Yuen-Yee, Hsieh, Tung-Ling, Chang, Edward Yi, Lee, Ching-Ting
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Auger spectroscopy Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Diffraction Diffusion Electronics Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Materials Science Metals Microelectronic fabrication (materials and surfaces technology) Optical and Electronic Materials Physical properties of thin films, nonelectronic Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thermal stability thermal effects Transmission electron microscopy
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