Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates

We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0 0 0 1) Si substrate. With increasing growth temperature ( T g), growth rate became high and residual impurities decreased. For T g=1600 °C, AlN with atomically flat...

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Veröffentlicht in:	Journal of crystal growth 2008-04, Vol.310 (7), p.2308-2313
Hauptverfasser:	Imura, Masataka, Sugimura, Hiroki, Okada, Narihito, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Metalorganic vapor phase epitaxy B1. Nitrides Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vapor phase epitaxy growth from vapor phase
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