Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0 0 0 1) Si substrate. With increasing growth temperature ( T g), growth rate became high and residual impurities decreased. For T g=1600 °C, AlN with atomically flat...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2008-04, Vol.310 (7), p.2308-2313 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2313 |
|---|---|
| container_issue | 7 |
| container_start_page | 2308 |
| container_title | Journal of crystal growth |
| container_volume | 310 |
| creator | Imura, Masataka Sugimura, Hiroki Okada, Narihito Iwaya, Motoaki Kamiyama, Satoshi Amano, Hiroshi Akasaki, Isamu Bandoh, Akira |
| description | We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0
0
0
1)
Si substrate. With increasing growth temperature (
T
g), growth rate became high and residual impurities decreased. For
T
g=1600
°C, AlN with atomically flat surface and low dislocation density were reproducibly obtained under the high growth rate at 6
μm/h. The narrowest distribution of tilt and twist were 76 and 360
arcsec, respectively, and the average dislocation density was measured to be 7×10
8
cm
−2. Most of dislocations were of edge-type, generated by the misfit between the AlN and the SiC substrate. For increases of
T
g up to 1600
°C, the number of dislocations at AlN/SiC interface decreased, and many of the dislocations were annihilated by the formation of a loop structure. |
| doi_str_mv | 10.1016/j.jcrysgro.2007.11.206 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_33021708</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024807011050</els_id><sourcerecordid>33021708</sourcerecordid><originalsourceid>FETCH-LOGICAL-c439t-80eea7ab401631a68202e5659994bbad6f0dc443b5bf5164f8b4f6c56a8417e3</originalsourceid><addsrcrecordid>eNqFUMtOwzAQtBBIlMIvIF_glmInjpPeqCoelRAc4G5t3E3rKomD7RT697gUuHLZOezM7OwQcsnZhDMubzaTjXY7v3J2kjJWTDiPKI_IiJdFluSMpcdkFGeasFSUp-TM-w1jUcnZiIRF24MO1NZ0bVbrJGDbo4MwOKTR8SOsabWjLQZoEutW0BlNt9BbR_s1eKTYmwCfO2o72hrtrA9u0N_q6DhrnvcL-Zi8mjn1QxW3ENCfk5MaGo8XPzgmb_d3b_PH5OnlYTGfPSVaZNOQlAwRCqhEzJpxkGXKUsxlPp1ORVXBUtZsqYXIqryqcy5FXVailjqXUApeYDYm1wfb3tn3AX1QrfEamwY6tINXWcZSXrAyEuWBuH_AO6xV70wLbqc4U_uO1Ub9dqz2HSvOI8oovPq5AF5DUzvotPF_6phXlnlWRN7tgYfx261Bp7w22GlcGoc6qKU1_536AlZ4l28</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>33021708</pqid></control><display><type>article</type><title>Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Imura, Masataka ; Sugimura, Hiroki ; Okada, Narihito ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Bandoh, Akira</creator><creatorcontrib>Imura, Masataka ; Sugimura, Hiroki ; Okada, Narihito ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Bandoh, Akira</creatorcontrib><description>We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0
0
0
1)
Si substrate. With increasing growth temperature (
T
g), growth rate became high and residual impurities decreased. For
T
g=1600
°C, AlN with atomically flat surface and low dislocation density were reproducibly obtained under the high growth rate at 6
μm/h. The narrowest distribution of tilt and twist were 76 and 360
arcsec, respectively, and the average dislocation density was measured to be 7×10
8
cm
−2. Most of dislocations were of edge-type, generated by the misfit between the AlN and the SiC substrate. For increases of
T
g up to 1600
°C, the number of dislocations at AlN/SiC interface decreased, and many of the dislocations were annihilated by the formation of a loop structure.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2007.11.206</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Metalorganic vapor phase epitaxy ; B1. Nitrides ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Exact sciences and technology ; Linear defects: dislocations, disclinations ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Structure and morphology; thickness ; Structure of solids and liquids; crystallography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2008-04, Vol.310 (7), p.2308-2313</ispartof><rights>2007 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-80eea7ab401631a68202e5659994bbad6f0dc443b5bf5164f8b4f6c56a8417e3</citedby><cites>FETCH-LOGICAL-c439t-80eea7ab401631a68202e5659994bbad6f0dc443b5bf5164f8b4f6c56a8417e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2007.11.206$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20268537$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Imura, Masataka</creatorcontrib><creatorcontrib>Sugimura, Hiroki</creatorcontrib><creatorcontrib>Okada, Narihito</creatorcontrib><creatorcontrib>Iwaya, Motoaki</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><creatorcontrib>Akasaki, Isamu</creatorcontrib><creatorcontrib>Bandoh, Akira</creatorcontrib><title>Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates</title><title>Journal of crystal growth</title><description>We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0
0
0
1)
Si substrate. With increasing growth temperature (
T
g), growth rate became high and residual impurities decreased. For
T
g=1600
°C, AlN with atomically flat surface and low dislocation density were reproducibly obtained under the high growth rate at 6
μm/h. The narrowest distribution of tilt and twist were 76 and 360
arcsec, respectively, and the average dislocation density was measured to be 7×10
8
cm
−2. Most of dislocations were of edge-type, generated by the misfit between the AlN and the SiC substrate. For increases of
T
g up to 1600
°C, the number of dislocations at AlN/SiC interface decreased, and many of the dislocations were annihilated by the formation of a loop structure.</description><subject>A3. Metalorganic vapor phase epitaxy</subject><subject>B1. Nitrides</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Linear defects: dislocations, disclinations</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMIvIF_glmInjpPeqCoelRAc4G5t3E3rKomD7RT697gUuHLZOezM7OwQcsnZhDMubzaTjXY7v3J2kjJWTDiPKI_IiJdFluSMpcdkFGeasFSUp-TM-w1jUcnZiIRF24MO1NZ0bVbrJGDbo4MwOKTR8SOsabWjLQZoEutW0BlNt9BbR_s1eKTYmwCfO2o72hrtrA9u0N_q6DhrnvcL-Zi8mjn1QxW3ENCfk5MaGo8XPzgmb_d3b_PH5OnlYTGfPSVaZNOQlAwRCqhEzJpxkGXKUsxlPp1ORVXBUtZsqYXIqryqcy5FXVailjqXUApeYDYm1wfb3tn3AX1QrfEamwY6tINXWcZSXrAyEuWBuH_AO6xV70wLbqc4U_uO1Ub9dqz2HSvOI8oovPq5AF5DUzvotPF_6phXlnlWRN7tgYfx261Bp7w22GlcGoc6qKU1_536AlZ4l28</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Imura, Masataka</creator><creator>Sugimura, Hiroki</creator><creator>Okada, Narihito</creator><creator>Iwaya, Motoaki</creator><creator>Kamiyama, Satoshi</creator><creator>Amano, Hiroshi</creator><creator>Akasaki, Isamu</creator><creator>Bandoh, Akira</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080401</creationdate><title>Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates</title><author>Imura, Masataka ; Sugimura, Hiroki ; Okada, Narihito ; Iwaya, Motoaki ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Bandoh, Akira</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-80eea7ab401631a68202e5659994bbad6f0dc443b5bf5164f8b4f6c56a8417e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A3. Metalorganic vapor phase epitaxy</topic><topic>B1. Nitrides</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Linear defects: dislocations, disclinations</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imura, Masataka</creatorcontrib><creatorcontrib>Sugimura, Hiroki</creatorcontrib><creatorcontrib>Okada, Narihito</creatorcontrib><creatorcontrib>Iwaya, Motoaki</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><creatorcontrib>Akasaki, Isamu</creatorcontrib><creatorcontrib>Bandoh, Akira</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imura, Masataka</au><au>Sugimura, Hiroki</au><au>Okada, Narihito</au><au>Iwaya, Motoaki</au><au>Kamiyama, Satoshi</au><au>Amano, Hiroshi</au><au>Akasaki, Isamu</au><au>Bandoh, Akira</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-04-01</date><risdate>2008</risdate><volume>310</volume><issue>7</issue><spage>2308</spage><epage>2313</epage><pages>2308-2313</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0
0
0
1)
Si substrate. With increasing growth temperature (
T
g), growth rate became high and residual impurities decreased. For
T
g=1600
°C, AlN with atomically flat surface and low dislocation density were reproducibly obtained under the high growth rate at 6
μm/h. The narrowest distribution of tilt and twist were 76 and 360
arcsec, respectively, and the average dislocation density was measured to be 7×10
8
cm
−2. Most of dislocations were of edge-type, generated by the misfit between the AlN and the SiC substrate. For increases of
T
g up to 1600
°C, the number of dislocations at AlN/SiC interface decreased, and many of the dislocations were annihilated by the formation of a loop structure.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2007.11.206</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2008-04, Vol.310 (7), p.2308-2313 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_33021708 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A3. Metalorganic vapor phase epitaxy B1. Nitrides Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vapor phase epitaxy growth from vapor phase |
| title | Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T13%3A09%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20high-temperature%20growth%20by%20metal-organic%20vapor%20phase%20epitaxy%20on%20microstructure%20of%20AlN%20on%206H-SiC%20substrates&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Imura,%20Masataka&rft.date=2008-04-01&rft.volume=310&rft.issue=7&rft.spage=2308&rft.epage=2313&rft.pages=2308-2313&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2007.11.206&rft_dat=%3Cproquest_cross%3E33021708%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=33021708&rft_id=info:pmid/&rft_els_id=S0022024807011050&rfr_iscdi=true |