Electrical and optical characterization of porous silicon/p-crystalline silicon heterojunction diodes

Electrical and optical characterization of porous silicon/p-crystalline silicon heterojunction diodes

The photoelectrical properties of porous silicon (PS) layers on p-type silicon were studied using two structures Au/PS/p-Si/Al (photodiode) and Au/PS/Au (photoconductor) with two different low porosity PS layer thicknesses each one. The electrical characteristics of the four fabricated devices were...

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Hauptverfasser: Fonthal, F, Trifonov, T, Rodriguez, A, Goyes, C, Marsal, L F, Ferre-Borrull, J, Pallares, J
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creator Fonthal, F
Trifonov, T
Rodriguez, A
Goyes, C
Marsal, L F
Ferre-Borrull, J
Pallares, J
description The photoelectrical properties of porous silicon (PS) layers on p-type silicon were studied using two structures Au/PS/p-Si/Al (photodiode) and Au/PS/Au (photoconductor) with two different low porosity PS layer thicknesses each one. The electrical characteristics of the four fabricated devices were compared under three different light sources: a cold white lamp with an IR filter, a 465 nm blue LED and a 945 nm IR LED. Our results show a linear dependence between the measured photocurrent and the illumination power for all light sources and all studied devices. The limiting transport mechanisms in the Au/PS contact and in the PS/p-Si junction were obtained by comparing the performance of the devices.
doi_str_mv 10.1063/1.2926970
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title Electrical and optical characterization of porous silicon/p-crystalline silicon heterojunction diodes
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