Study on Improvement of Material Removal Rate in Chemo-Mechanical Grinding (CMG) of Si Wafer
Silicon wafer thinning process is meeting great challenges to fulfill requirements of ultra-thin IGBT for automotive applications. Chemo-mechanical grinding (CMG) process is potentially emerging stress relief thinning process which combines the advantages of fixed abrasive machining and chemical mec...
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| Veröffentlicht in: | Key engineering materials 2009-01, Vol.389-390, p.13-17 |
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| container_title | Key engineering materials |
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| creator | Soltani, B.H. Kamiya, Sumio Mitsuta, Takahito Zhou, Li Bo Iwase, Hisao Shimizu, Jun Sasaki, J. Tsuruga, T. Tian, Y.B. Eda, Hiroshi Tashiro, Y. |
| description | Silicon wafer thinning process is meeting great challenges to fulfill requirements of
ultra-thin IGBT for automotive applications. Chemo-mechanical grinding (CMG) process is
potentially emerging stress relief thinning process which combines the advantages of fixed abrasive
machining and chemical mechanical polishing (CMP). A major issue in CMG of Si wafers is the
relatively low material removal rate (MRR). This paper studies the influence of the wheel
specifications and grinding conditions on the MRR of CMG. Two sets of three-factor two-level full
factorial designs of experiment (DOE)[1] are employed to reveal the main effects and interacted
effects of CMG wheel specifications and grinding parameters on MRR. The optimal combination
scenarios for improving MRR of CMG are analysized and obtained. By use of the optimal CMG
wheel and grinding parameters, the MRR of more than 60nm/min is achieved. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.389-390.13 |
| format | Article |
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ultra-thin IGBT for automotive applications. Chemo-mechanical grinding (CMG) process is
potentially emerging stress relief thinning process which combines the advantages of fixed abrasive
machining and chemical mechanical polishing (CMP). A major issue in CMG of Si wafers is the
relatively low material removal rate (MRR). This paper studies the influence of the wheel
specifications and grinding conditions on the MRR of CMG. Two sets of three-factor two-level full
factorial designs of experiment (DOE)[1] are employed to reveal the main effects and interacted
effects of CMG wheel specifications and grinding parameters on MRR. The optimal combination
scenarios for improving MRR of CMG are analysized and obtained. By use of the optimal CMG
wheel and grinding parameters, the MRR of more than 60nm/min is achieved.</description><identifier>ISSN: 1013-9826</identifier><identifier>ISSN: 1662-9795</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.389-390.13</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Key engineering materials, 2009-01, Vol.389-390, p.13-17</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c434t-a2a41a3a19fb4cb6968acd229b2587326eb0e745f82a27f93221021f3817fe783</citedby><cites>FETCH-LOGICAL-c434t-a2a41a3a19fb4cb6968acd229b2587326eb0e745f82a27f93221021f3817fe783</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/759?width=600</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Soltani, B.H.</creatorcontrib><creatorcontrib>Kamiya, Sumio</creatorcontrib><creatorcontrib>Mitsuta, Takahito</creatorcontrib><creatorcontrib>Zhou, Li Bo</creatorcontrib><creatorcontrib>Iwase, Hisao</creatorcontrib><creatorcontrib>Shimizu, Jun</creatorcontrib><creatorcontrib>Sasaki, J.</creatorcontrib><creatorcontrib>Tsuruga, T.</creatorcontrib><creatorcontrib>Tian, Y.B.</creatorcontrib><creatorcontrib>Eda, Hiroshi</creatorcontrib><creatorcontrib>Tashiro, Y.</creatorcontrib><title>Study on Improvement of Material Removal Rate in Chemo-Mechanical Grinding (CMG) of Si Wafer</title><title>Key engineering materials</title><description>Silicon wafer thinning process is meeting great challenges to fulfill requirements of
ultra-thin IGBT for automotive applications. Chemo-mechanical grinding (CMG) process is
potentially emerging stress relief thinning process which combines the advantages of fixed abrasive
machining and chemical mechanical polishing (CMP). A major issue in CMG of Si wafers is the
relatively low material removal rate (MRR). This paper studies the influence of the wheel
specifications and grinding conditions on the MRR of CMG. Two sets of three-factor two-level full
factorial designs of experiment (DOE)[1] are employed to reveal the main effects and interacted
effects of CMG wheel specifications and grinding parameters on MRR. The optimal combination
scenarios for improving MRR of CMG are analysized and obtained. By use of the optimal CMG
wheel and grinding parameters, the MRR of more than 60nm/min is achieved.</description><issn>1013-9826</issn><issn>1662-9795</issn><issn>1662-9795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqVkMtKAzEUhgdRsFbfISuxi5nmMpdkWYZaiy2CVdwIIZMmNqWTqclMS9_eDBVcuzqHc_ng_6JohGCSQkzHx-Mx8dIo2xptZGJVO36eLhNCWUwYTBC5iAYoz3HMCpZdhh4iEjOK8-voxvsthARRlA2iz1XbrU-gsWBe711zUHVAgkaDpWiVM2IHXlXdHPoaBsBYUG7CIF4quRHWyLCYOWPXxn6Bh3I5G_W_KwM-hFbuNrrSYufV3W8dRu-P07fyKV68zOblZBHLlKRtLLBIkSACMV2lsspZToVcY8wqnNGC4FxVUBVppikWuNCMYIwgRppQVGhVUDKM7s_ckOC7U77ltfFS7XbCqqbznGBG8ywj4XByPpSu8d4pzffO1MKdOIK898qDV_7nlQevPHjlwSsPXjnqGeWZ0TphfRs88G3TORsC_oPyA2oXifI</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Soltani, B.H.</creator><creator>Kamiya, Sumio</creator><creator>Mitsuta, Takahito</creator><creator>Zhou, Li Bo</creator><creator>Iwase, Hisao</creator><creator>Shimizu, Jun</creator><creator>Sasaki, J.</creator><creator>Tsuruga, T.</creator><creator>Tian, Y.B.</creator><creator>Eda, Hiroshi</creator><creator>Tashiro, Y.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090101</creationdate><title>Study on Improvement of Material Removal Rate in Chemo-Mechanical Grinding (CMG) of Si Wafer</title><author>Soltani, B.H. ; Kamiya, Sumio ; Mitsuta, Takahito ; Zhou, Li Bo ; Iwase, Hisao ; Shimizu, Jun ; Sasaki, J. ; Tsuruga, T. ; Tian, Y.B. ; Eda, Hiroshi ; Tashiro, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-a2a41a3a19fb4cb6968acd229b2587326eb0e745f82a27f93221021f3817fe783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Soltani, B.H.</creatorcontrib><creatorcontrib>Kamiya, Sumio</creatorcontrib><creatorcontrib>Mitsuta, Takahito</creatorcontrib><creatorcontrib>Zhou, Li Bo</creatorcontrib><creatorcontrib>Iwase, Hisao</creatorcontrib><creatorcontrib>Shimizu, Jun</creatorcontrib><creatorcontrib>Sasaki, J.</creatorcontrib><creatorcontrib>Tsuruga, T.</creatorcontrib><creatorcontrib>Tian, Y.B.</creatorcontrib><creatorcontrib>Eda, Hiroshi</creatorcontrib><creatorcontrib>Tashiro, Y.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Key engineering materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Soltani, B.H.</au><au>Kamiya, Sumio</au><au>Mitsuta, Takahito</au><au>Zhou, Li Bo</au><au>Iwase, Hisao</au><au>Shimizu, Jun</au><au>Sasaki, J.</au><au>Tsuruga, T.</au><au>Tian, Y.B.</au><au>Eda, Hiroshi</au><au>Tashiro, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on Improvement of Material Removal Rate in Chemo-Mechanical Grinding (CMG) of Si Wafer</atitle><jtitle>Key engineering materials</jtitle><date>2009-01-01</date><risdate>2009</risdate><volume>389-390</volume><spage>13</spage><epage>17</epage><pages>13-17</pages><issn>1013-9826</issn><issn>1662-9795</issn><eissn>1662-9795</eissn><abstract>Silicon wafer thinning process is meeting great challenges to fulfill requirements of
ultra-thin IGBT for automotive applications. Chemo-mechanical grinding (CMG) process is
potentially emerging stress relief thinning process which combines the advantages of fixed abrasive
machining and chemical mechanical polishing (CMP). A major issue in CMG of Si wafers is the
relatively low material removal rate (MRR). This paper studies the influence of the wheel
specifications and grinding conditions on the MRR of CMG. Two sets of three-factor two-level full
factorial designs of experiment (DOE)[1] are employed to reveal the main effects and interacted
effects of CMG wheel specifications and grinding parameters on MRR. The optimal combination
scenarios for improving MRR of CMG are analysized and obtained. By use of the optimal CMG
wheel and grinding parameters, the MRR of more than 60nm/min is achieved.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/KEM.389-390.13</doi><tpages>5</tpages></addata></record> |
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| title | Study on Improvement of Material Removal Rate in Chemo-Mechanical Grinding (CMG) of Si Wafer |
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