Fabrication and optical properties of SnS thin films by SILAR method
Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO...
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Veröffentlicht in: | Applied surface science 2008-08, Vol.254 (20), p.6436-6440 |
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creator | Ghosh, Biswajit Das, Madhumita Banerjee, Pushan Das, Subrata |
description | Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20
μm thickness were grown on glass and ITO substrates by SILAR method using SnSO
4 and Na
2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV–vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825
nm (near band edge emission) dominated the photoluminescence spectra. |
doi_str_mv | 10.1016/j.apsusc.2008.04.008 |
format | Article |
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μm thickness were grown on glass and ITO substrates by SILAR method using SnSO
4 and Na
2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV–vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825
nm (near band edge emission) dominated the photoluminescence spectra.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2008.04.008</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Photoluminescence ; Physics ; SILAR ; SnS ; Thin film</subject><ispartof>Applied surface science, 2008-08, Vol.254 (20), p.6436-6440</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c433t-2cb6453fde0db7540002657621f1c0bd4190b72e8a288bc0ba99bff9405166de3</citedby><cites>FETCH-LOGICAL-c433t-2cb6453fde0db7540002657621f1c0bd4190b72e8a288bc0ba99bff9405166de3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2008.04.008$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20581659$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ghosh, Biswajit</creatorcontrib><creatorcontrib>Das, Madhumita</creatorcontrib><creatorcontrib>Banerjee, Pushan</creatorcontrib><creatorcontrib>Das, Subrata</creatorcontrib><title>Fabrication and optical properties of SnS thin films by SILAR method</title><title>Applied surface science</title><description>Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20
μm thickness were grown on glass and ITO substrates by SILAR method using SnSO
4 and Na
2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV–vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825
nm (near band edge emission) dominated the photoluminescence spectra.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>SILAR</subject><subject>SnS</subject><subject>Thin film</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMoWC9v4CIb3c14ksncNkKpVgsFweo65EpT5mYyFfr2pkxx6ernnPOd24_QHYGUACked6kYwj6olAJUKbA0yhmakarMkjyv2DmaRaxOWJbRS3QVwg6A0FidoeelkN4pMbq-w6LTuB_GGDZ48P1g_OhMwL3Fm26Dx63rsHVNG7A84M1qPf_ArRm3vb5BF1Y0wdye9Bp9LV8-F2_J-v11tZivExU3jwlVsmB5ZrUBLcucAQAt8rKgxBIFUjNSgyypqQStKhkzoq6ltTWDnBSFNtk1epjmxuO-9yaMvHVBmaYRnen3gWfxJ1pSEkE2gcr3IXhj-eBdK_yBE-BHy_iOT5bxo2UcGI8S2-5P80WIHlgvOuXCXy-FvCJFXkfuaeJMfPbHGc-DcqZTRjtv1Mh17_5f9AuJlIKO</recordid><startdate>20080815</startdate><enddate>20080815</enddate><creator>Ghosh, Biswajit</creator><creator>Das, Madhumita</creator><creator>Banerjee, Pushan</creator><creator>Das, Subrata</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080815</creationdate><title>Fabrication and optical properties of SnS thin films by SILAR method</title><author>Ghosh, Biswajit ; Das, Madhumita ; Banerjee, Pushan ; Das, Subrata</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c433t-2cb6453fde0db7540002657621f1c0bd4190b72e8a288bc0ba99bff9405166de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>SILAR</topic><topic>SnS</topic><topic>Thin film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ghosh, Biswajit</creatorcontrib><creatorcontrib>Das, Madhumita</creatorcontrib><creatorcontrib>Banerjee, Pushan</creatorcontrib><creatorcontrib>Das, Subrata</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ghosh, Biswajit</au><au>Das, Madhumita</au><au>Banerjee, Pushan</au><au>Das, Subrata</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and optical properties of SnS thin films by SILAR method</atitle><jtitle>Applied surface science</jtitle><date>2008-08-15</date><risdate>2008</risdate><volume>254</volume><issue>20</issue><spage>6436</spage><epage>6440</epage><pages>6436-6440</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20
μm thickness were grown on glass and ITO substrates by SILAR method using SnSO
4 and Na
2S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV–vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825
nm (near band edge emission) dominated the photoluminescence spectra.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2008.04.008</doi><tpages>5</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Photoluminescence Physics SILAR SnS Thin film |
title | Fabrication and optical properties of SnS thin films by SILAR method |
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