Growth and characterization of CdTe:Ge:Yb

Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×10 17 cm −3 and...

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Veröffentlicht in:	Journal of crystal growth 2008-04, Vol.310 (7), p.2076-2079
Hauptverfasser:	Sochinskii, N.V., Saucedo, E., Abellan, M., Rodríguez-Fernández, J., Hidalgo, P., Piqueras, J., Ruiz, C.M., Bermúdez, V., Diéguez, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	A2. Bridgman technique A3. Vapor-phase epitaxy B1. CdTe B2. Semiconducting II–VI Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase
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