Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fabricated device. The double emission peaks feature i...

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Veröffentlicht in:	Journal of crystal growth 2008-04, Vol.310 (7), p.2330-2333
Hauptverfasser:	Ling, Shih-Chun, Wang, Te-Chung, Ko, Tsung-Shine, Lu, Tien-Chang, Kuo, Hao-Chung, Wang, Shing-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Metalorganic chemical vapor deposition Applied sciences B1. Inorganic compounds B2. Semiconducting gallium compounds B3. Light emitting diodes Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Electroluminescence Electronics Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optoelectronic devices Other luminescence and radiative recombination Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Structure of solids and liquids crystallography
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