Stable ultraviolet photoluminescence of nanoporous silicon

In this paper, we report for the first time the observation from porous silicon (PS) the intense, narrow (∼0.12 eV) line of ultraviolet (UV) (375 nm) photoluminescence (PL) that in air is long-duration stable (at least few month). The intense UV line is created after exposure of PS sample in ambient...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.258-261
Hauptverfasser:	Gorelkinskii, Yu.V., Abdullin, Kh.A., Kalykova, G.K., Kikkarin, S.M., Mukashev, B.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Photoluminescence Porous silicon Raman scattering
Online-Zugang:	Volltext
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