Random Circuit Breaker Network Model for Unipolar Resistance Switching

Random Circuit Breaker Network Model for Unipolar Resistance Switching

The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyz...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2008-03, Vol.20 (6), p.1154-1159
Hauptverfasser: Chae, Seung Chul, Lee, Jae Sung, Kim, Sejin, Lee, Shin Buhm, Chang, Seo Hyoung, Liu, Chunli, Kahng, Byungnam, Shin, Hyunjung, Kim, Dong-Wook, Jung, Chang Uk, Seo, Sunae, Lee, Myoung-Jae, Noh, Tae Won
Format: Artikel
Sprache:eng
Schlagworte:
atomic force microscopy
modeling
titanium oxides
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1159
container_issue 6
container_start_page 1154
container_title Advanced materials (Weinheim)
container_volume 20
creator Chae, Seung Chul
Lee, Jae Sung
Kim, Sejin
Lee, Shin Buhm
Chang, Seo Hyoung
Liu, Chunli
Kahng, Byungnam
Shin, Hyunjung
Kim, Dong-Wook
Jung, Chang Uk
Seo, Sunae
Lee, Myoung-Jae
Noh, Tae Won
description The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.
doi_str_mv 10.1002/adma.200702024
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_32621728</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>32621728</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4244-9d002a3eb5594c027eef4147eec8e4f0f0781b55f9d2760f81354d5e7b010ac83</originalsourceid><addsrcrecordid>eNqFkE1PwkAURSdGExHduu7KXfHNdKYfS0QBtWBEicvJMH3VkdLiTAny7y2pIe5c3cW75-blEHJJoUcB2LXKVqrHACJgwPgR6VDBqM8hEcekA0kg_CTk8Sk5c-4TAJIQwg4ZzlSZVStvYKzemNq7saiWaL0p1tvKLr1JlWHh5ZX15qVZV4Wy3gydcbUqNXovW1PrD1O-n5OTXBUOL36zS-bDu9fB2E-fRveDfuprzjj3k6x5VAW4ECLhGliEmHPKm9Ax8hxyiGLaHPMkY1EIeUwDwTOB0QIoKB0HXXLV7q5t9bVBV8uVcRqLQpVYbZwMWMhoxPbFXlvUtnLOYi7X1qyU3UkKcq9L7nXJg64GSFpgawrc_dOW_dtJ_y_rt2zjBb8PrLJLGUZBJOTbdCSHIg2fHx7HMg1-AHuFfS8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>32621728</pqid></control><display><type>article</type><title>Random Circuit Breaker Network Model for Unipolar Resistance Switching</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Chae, Seung Chul ; Lee, Jae Sung ; Kim, Sejin ; Lee, Shin Buhm ; Chang, Seo Hyoung ; Liu, Chunli ; Kahng, Byungnam ; Shin, Hyunjung ; Kim, Dong-Wook ; Jung, Chang Uk ; Seo, Sunae ; Lee, Myoung-Jae ; Noh, Tae Won</creator><creatorcontrib>Chae, Seung Chul ; Lee, Jae Sung ; Kim, Sejin ; Lee, Shin Buhm ; Chang, Seo Hyoung ; Liu, Chunli ; Kahng, Byungnam ; Shin, Hyunjung ; Kim, Dong-Wook ; Jung, Chang Uk ; Seo, Sunae ; Lee, Myoung-Jae ; Noh, Tae Won</creatorcontrib><description>The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200702024</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>atomic force microscopy ; modeling ; titanium oxides</subject><ispartof>Advanced materials (Weinheim), 2008-03, Vol.20 (6), p.1154-1159</ispartof><rights>Copyright © 2008 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4244-9d002a3eb5594c027eef4147eec8e4f0f0781b55f9d2760f81354d5e7b010ac83</citedby><cites>FETCH-LOGICAL-c4244-9d002a3eb5594c027eef4147eec8e4f0f0781b55f9d2760f81354d5e7b010ac83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.200702024$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.200702024$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,777,781,1412,27905,27906,45555,45556</link.rule.ids></links><search><creatorcontrib>Chae, Seung Chul</creatorcontrib><creatorcontrib>Lee, Jae Sung</creatorcontrib><creatorcontrib>Kim, Sejin</creatorcontrib><creatorcontrib>Lee, Shin Buhm</creatorcontrib><creatorcontrib>Chang, Seo Hyoung</creatorcontrib><creatorcontrib>Liu, Chunli</creatorcontrib><creatorcontrib>Kahng, Byungnam</creatorcontrib><creatorcontrib>Shin, Hyunjung</creatorcontrib><creatorcontrib>Kim, Dong-Wook</creatorcontrib><creatorcontrib>Jung, Chang Uk</creatorcontrib><creatorcontrib>Seo, Sunae</creatorcontrib><creatorcontrib>Lee, Myoung-Jae</creatorcontrib><creatorcontrib>Noh, Tae Won</creatorcontrib><title>Random Circuit Breaker Network Model for Unipolar Resistance Switching</title><title>Advanced materials (Weinheim)</title><addtitle>Adv. Mater</addtitle><description>The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.</description><subject>atomic force microscopy</subject><subject>modeling</subject><subject>titanium oxides</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PwkAURSdGExHduu7KXfHNdKYfS0QBtWBEicvJMH3VkdLiTAny7y2pIe5c3cW75-blEHJJoUcB2LXKVqrHACJgwPgR6VDBqM8hEcekA0kg_CTk8Sk5c-4TAJIQwg4ZzlSZVStvYKzemNq7saiWaL0p1tvKLr1JlWHh5ZX15qVZV4Wy3gydcbUqNXovW1PrD1O-n5OTXBUOL36zS-bDu9fB2E-fRveDfuprzjj3k6x5VAW4ECLhGliEmHPKm9Ax8hxyiGLaHPMkY1EIeUwDwTOB0QIoKB0HXXLV7q5t9bVBV8uVcRqLQpVYbZwMWMhoxPbFXlvUtnLOYi7X1qyU3UkKcq9L7nXJg64GSFpgawrc_dOW_dtJ_y_rt2zjBb8PrLJLGUZBJOTbdCSHIg2fHx7HMg1-AHuFfS8</recordid><startdate>20080318</startdate><enddate>20080318</enddate><creator>Chae, Seung Chul</creator><creator>Lee, Jae Sung</creator><creator>Kim, Sejin</creator><creator>Lee, Shin Buhm</creator><creator>Chang, Seo Hyoung</creator><creator>Liu, Chunli</creator><creator>Kahng, Byungnam</creator><creator>Shin, Hyunjung</creator><creator>Kim, Dong-Wook</creator><creator>Jung, Chang Uk</creator><creator>Seo, Sunae</creator><creator>Lee, Myoung-Jae</creator><creator>Noh, Tae Won</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080318</creationdate><title>Random Circuit Breaker Network Model for Unipolar Resistance Switching</title><author>Chae, Seung Chul ; Lee, Jae Sung ; Kim, Sejin ; Lee, Shin Buhm ; Chang, Seo Hyoung ; Liu, Chunli ; Kahng, Byungnam ; Shin, Hyunjung ; Kim, Dong-Wook ; Jung, Chang Uk ; Seo, Sunae ; Lee, Myoung-Jae ; Noh, Tae Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4244-9d002a3eb5594c027eef4147eec8e4f0f0781b55f9d2760f81354d5e7b010ac83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>atomic force microscopy</topic><topic>modeling</topic><topic>titanium oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chae, Seung Chul</creatorcontrib><creatorcontrib>Lee, Jae Sung</creatorcontrib><creatorcontrib>Kim, Sejin</creatorcontrib><creatorcontrib>Lee, Shin Buhm</creatorcontrib><creatorcontrib>Chang, Seo Hyoung</creatorcontrib><creatorcontrib>Liu, Chunli</creatorcontrib><creatorcontrib>Kahng, Byungnam</creatorcontrib><creatorcontrib>Shin, Hyunjung</creatorcontrib><creatorcontrib>Kim, Dong-Wook</creatorcontrib><creatorcontrib>Jung, Chang Uk</creatorcontrib><creatorcontrib>Seo, Sunae</creatorcontrib><creatorcontrib>Lee, Myoung-Jae</creatorcontrib><creatorcontrib>Noh, Tae Won</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chae, Seung Chul</au><au>Lee, Jae Sung</au><au>Kim, Sejin</au><au>Lee, Shin Buhm</au><au>Chang, Seo Hyoung</au><au>Liu, Chunli</au><au>Kahng, Byungnam</au><au>Shin, Hyunjung</au><au>Kim, Dong-Wook</au><au>Jung, Chang Uk</au><au>Seo, Sunae</au><au>Lee, Myoung-Jae</au><au>Noh, Tae Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Random Circuit Breaker Network Model for Unipolar Resistance Switching</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2008-03-18</date><risdate>2008</risdate><volume>20</volume><issue>6</issue><spage>1154</spage><epage>1159</epage><pages>1154-1159</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/adma.200702024</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0935-9648
ispartof Advanced materials (Weinheim), 2008-03, Vol.20 (6), p.1154-1159
issn 0935-9648
1521-4095
language eng
recordid cdi_proquest_miscellaneous_32621728
source Wiley Online Library Journals Frontfile Complete
subjects atomic force microscopy
modeling
titanium oxides
title Random Circuit Breaker Network Model for Unipolar Resistance Switching
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T01%3A21%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Random%20Circuit%20Breaker%20Network%20Model%20for%20Unipolar%20Resistance%20Switching&rft.jtitle=Advanced%20materials%20(Weinheim)&rft.au=Chae,%20Seung%20Chul&rft.date=2008-03-18&rft.volume=20&rft.issue=6&rft.spage=1154&rft.epage=1159&rft.pages=1154-1159&rft.issn=0935-9648&rft.eissn=1521-4095&rft_id=info:doi/10.1002/adma.200702024&rft_dat=%3Cproquest_cross%3E32621728%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=32621728&rft_id=info:pmid/&rfr_iscdi=true