InSb nanocrystals embedded in SiO2: Strain and melting-point hysteresis
In this work we demonstrate that InSb nanocrystals embedded in SiO2 display a substantial melting-point hysteresis. Transmission electron microscopy was performed after heat treatment on the 500nm-thick SiO2 films doped with 10at.% of In and Sb atoms in order to verify the presence of the nanocrysta...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-02, Vol.147 (2-3), p.141-143 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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