Electrostatic modification of the conductive properties of amorphous Bi ultrathin films
The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties...
Gespeichert in:
Veröffentlicht in: | Physica. C, Superconductivity Superconductivity, 2008-02, Vol.468 (4), p.299-303 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 303 |
---|---|
container_issue | 4 |
container_start_page | 299 |
container_title | Physica. C, Superconductivity |
container_volume | 468 |
creator | Sarwa, K.H. Tan, B. Parendo, Kevin Lin, Yen-Hsiang Goldman, A.M. |
description | The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties of materials through controlled and reversible changes in carrier concentration, without altering the degree of disorder or the chemical composition. Electrostatic doping can also serve as a tool for studying quantum critical behavior, by allowing the ground state of a system to be tuned in a controlled fashion. This is precisely what has been done in tuning the transition between insulating and superconducting ground states of ultrathin films of amorphous bismuth. |
doi_str_mv | 10.1016/j.physc.2007.08.019 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_32394713</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921453407013585</els_id><sourcerecordid>1671374863</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-a148e4c2adde1eefbeb67cb3287db9fc4325a43b07e2a003f734a1c60a0083a93</originalsourceid><addsrcrecordid>eNp9kU1P4zAQQC20SHQLv4BLLqy4JOsv4uSwhwWV3ZUqcQFxtJzJWHWVxFnbReq_x6UVR-bisfzGM3pDyDWjFaOs_rmt5s0-QsUpVRVtKsraM7JgjRIlZ1J8IwvaclbKOyEvyPcYtzQHa9mCvK4GhBR8TCY5KEbfO-sg534qvC3SBgvwU7-D5N6wmIOfMSSH8fBoRh_mjd_F4t4VuyEFkzZuKqwbxnhJzq0ZIl6dziV5eVw9P_wt109__j38XpcgpEqlYbJBCdz0PTJE22FXK-gEb1TftRak4HdGio4q5IZSYZWQhkFN86URphVL8uP4bx7t_w5j0qOLgMNgJsyTacFFKxUTGbz9EmR1ppRs6gMqjihkLzGg1XNwowl7zag--NZb_eFbH3xr2ujsMlfdnBqYCGawwUzg4mcpp0JKnjewJL-OHGYtbw6DjuBwAuxdyKvQvXdf9nkHJkuYzw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671374863</pqid></control><display><type>article</type><title>Electrostatic modification of the conductive properties of amorphous Bi ultrathin films</title><source>Elsevier ScienceDirect Journals</source><creator>Sarwa, K.H. ; Tan, B. ; Parendo, Kevin ; Lin, Yen-Hsiang ; Goldman, A.M.</creator><creatorcontrib>Sarwa, K.H. ; Tan, B. ; Parendo, Kevin ; Lin, Yen-Hsiang ; Goldman, A.M.</creatorcontrib><description>The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties of materials through controlled and reversible changes in carrier concentration, without altering the degree of disorder or the chemical composition. Electrostatic doping can also serve as a tool for studying quantum critical behavior, by allowing the ground state of a system to be tuned in a controlled fashion. This is precisely what has been done in tuning the transition between insulating and superconducting ground states of ultrathin films of amorphous bismuth.</description><identifier>ISSN: 0921-4534</identifier><identifier>EISSN: 1873-2143</identifier><identifier>DOI: 10.1016/j.physc.2007.08.019</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>74.40.+k ; Bismuth ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Doping ; Electrostatic charging ; Electrostatics ; Exact sciences and technology ; Ground state ; Low tc films ; Magnetic properties ; Physics ; Quantum criticality ; Superconducting films and low-dimensional structures ; Superconductivity ; Superconductor-insulator transitions ; Thin films ; Tuning</subject><ispartof>Physica. C, Superconductivity, 2008-02, Vol.468 (4), p.299-303</ispartof><rights>2007 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c347t-a148e4c2adde1eefbeb67cb3287db9fc4325a43b07e2a003f734a1c60a0083a93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physc.2007.08.019$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20344245$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sarwa, K.H.</creatorcontrib><creatorcontrib>Tan, B.</creatorcontrib><creatorcontrib>Parendo, Kevin</creatorcontrib><creatorcontrib>Lin, Yen-Hsiang</creatorcontrib><creatorcontrib>Goldman, A.M.</creatorcontrib><title>Electrostatic modification of the conductive properties of amorphous Bi ultrathin films</title><title>Physica. C, Superconductivity</title><description>The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties of materials through controlled and reversible changes in carrier concentration, without altering the degree of disorder or the chemical composition. Electrostatic doping can also serve as a tool for studying quantum critical behavior, by allowing the ground state of a system to be tuned in a controlled fashion. This is precisely what has been done in tuning the transition between insulating and superconducting ground states of ultrathin films of amorphous bismuth.</description><subject>74.40.+k</subject><subject>Bismuth</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Doping</subject><subject>Electrostatic charging</subject><subject>Electrostatics</subject><subject>Exact sciences and technology</subject><subject>Ground state</subject><subject>Low tc films</subject><subject>Magnetic properties</subject><subject>Physics</subject><subject>Quantum criticality</subject><subject>Superconducting films and low-dimensional structures</subject><subject>Superconductivity</subject><subject>Superconductor-insulator transitions</subject><subject>Thin films</subject><subject>Tuning</subject><issn>0921-4534</issn><issn>1873-2143</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kU1P4zAQQC20SHQLv4BLLqy4JOsv4uSwhwWV3ZUqcQFxtJzJWHWVxFnbReq_x6UVR-bisfzGM3pDyDWjFaOs_rmt5s0-QsUpVRVtKsraM7JgjRIlZ1J8IwvaclbKOyEvyPcYtzQHa9mCvK4GhBR8TCY5KEbfO-sg534qvC3SBgvwU7-D5N6wmIOfMSSH8fBoRh_mjd_F4t4VuyEFkzZuKqwbxnhJzq0ZIl6dziV5eVw9P_wt109__j38XpcgpEqlYbJBCdz0PTJE22FXK-gEb1TftRak4HdGio4q5IZSYZWQhkFN86URphVL8uP4bx7t_w5j0qOLgMNgJsyTacFFKxUTGbz9EmR1ppRs6gMqjihkLzGg1XNwowl7zag--NZb_eFbH3xr2ujsMlfdnBqYCGawwUzg4mcpp0JKnjewJL-OHGYtbw6DjuBwAuxdyKvQvXdf9nkHJkuYzw</recordid><startdate>20080215</startdate><enddate>20080215</enddate><creator>Sarwa, K.H.</creator><creator>Tan, B.</creator><creator>Parendo, Kevin</creator><creator>Lin, Yen-Hsiang</creator><creator>Goldman, A.M.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20080215</creationdate><title>Electrostatic modification of the conductive properties of amorphous Bi ultrathin films</title><author>Sarwa, K.H. ; Tan, B. ; Parendo, Kevin ; Lin, Yen-Hsiang ; Goldman, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-a148e4c2adde1eefbeb67cb3287db9fc4325a43b07e2a003f734a1c60a0083a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>74.40.+k</topic><topic>Bismuth</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Doping</topic><topic>Electrostatic charging</topic><topic>Electrostatics</topic><topic>Exact sciences and technology</topic><topic>Ground state</topic><topic>Low tc films</topic><topic>Magnetic properties</topic><topic>Physics</topic><topic>Quantum criticality</topic><topic>Superconducting films and low-dimensional structures</topic><topic>Superconductivity</topic><topic>Superconductor-insulator transitions</topic><topic>Thin films</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarwa, K.H.</creatorcontrib><creatorcontrib>Tan, B.</creatorcontrib><creatorcontrib>Parendo, Kevin</creatorcontrib><creatorcontrib>Lin, Yen-Hsiang</creatorcontrib><creatorcontrib>Goldman, A.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. C, Superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarwa, K.H.</au><au>Tan, B.</au><au>Parendo, Kevin</au><au>Lin, Yen-Hsiang</au><au>Goldman, A.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrostatic modification of the conductive properties of amorphous Bi ultrathin films</atitle><jtitle>Physica. C, Superconductivity</jtitle><date>2008-02-15</date><risdate>2008</risdate><volume>468</volume><issue>4</issue><spage>299</spage><epage>303</epage><pages>299-303</pages><issn>0921-4534</issn><eissn>1873-2143</eissn><abstract>The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties of materials through controlled and reversible changes in carrier concentration, without altering the degree of disorder or the chemical composition. Electrostatic doping can also serve as a tool for studying quantum critical behavior, by allowing the ground state of a system to be tuned in a controlled fashion. This is precisely what has been done in tuning the transition between insulating and superconducting ground states of ultrathin films of amorphous bismuth.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physc.2007.08.019</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0921-4534 |
ispartof | Physica. C, Superconductivity, 2008-02, Vol.468 (4), p.299-303 |
issn | 0921-4534 1873-2143 |
language | eng |
recordid | cdi_proquest_miscellaneous_32394713 |
source | Elsevier ScienceDirect Journals |
subjects | 74.40.+k Bismuth Condensed matter: electronic structure, electrical, magnetic, and optical properties Doping Electrostatic charging Electrostatics Exact sciences and technology Ground state Low tc films Magnetic properties Physics Quantum criticality Superconducting films and low-dimensional structures Superconductivity Superconductor-insulator transitions Thin films Tuning |
title | Electrostatic modification of the conductive properties of amorphous Bi ultrathin films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T17%3A04%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrostatic%20modification%20of%20the%20conductive%20properties%20of%20amorphous%20Bi%20ultrathin%20films&rft.jtitle=Physica.%20C,%20Superconductivity&rft.au=Sarwa,%20K.H.&rft.date=2008-02-15&rft.volume=468&rft.issue=4&rft.spage=299&rft.epage=303&rft.pages=299-303&rft.issn=0921-4534&rft.eissn=1873-2143&rft_id=info:doi/10.1016/j.physc.2007.08.019&rft_dat=%3Cproquest_cross%3E1671374863%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671374863&rft_id=info:pmid/&rft_els_id=S0921453407013585&rfr_iscdi=true |