Electrostatic modification of the conductive properties of amorphous Bi ultrathin films

The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties...

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Veröffentlicht in:Physica. C, Superconductivity Superconductivity, 2008-02, Vol.468 (4), p.299-303
Hauptverfasser: Sarwa, K.H., Tan, B., Parendo, Kevin, Lin, Yen-Hsiang, Goldman, A.M.
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container_issue 4
container_start_page 299
container_title Physica. C, Superconductivity
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creator Sarwa, K.H.
Tan, B.
Parendo, Kevin
Lin, Yen-Hsiang
Goldman, A.M.
description The application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area with roots that go back to the turn of the 20th century. The technique in principle provides the opportunity to modify the electronic and magnetic properties of materials through controlled and reversible changes in carrier concentration, without altering the degree of disorder or the chemical composition. Electrostatic doping can also serve as a tool for studying quantum critical behavior, by allowing the ground state of a system to be tuned in a controlled fashion. This is precisely what has been done in tuning the transition between insulating and superconducting ground states of ultrathin films of amorphous bismuth.
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subjects 74.40.+k
Bismuth
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Doping
Electrostatic charging
Electrostatics
Exact sciences and technology
Ground state
Low tc films
Magnetic properties
Physics
Quantum criticality
Superconducting films and low-dimensional structures
Superconductivity
Superconductor-insulator transitions
Thin films
Tuning
title Electrostatic modification of the conductive properties of amorphous Bi ultrathin films
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