Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnects
The effect of the type of capping layer and post-CMP surface treatments on the adhesion between damascene Cu and the capping layer was investigated. The CMPed-surface was treated by six methods divided into four groups which consisted of no surface treatment, cleaning by plasma with vacuum break, cl...
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| Veröffentlicht in: | Microelectronic engineering 2008-03, Vol.85 (3), p.621-624 |
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| container_title | Microelectronic engineering |
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| creator | Yi, Seol-Min Shim, Cheonman Lee, Han-Choon Han, Jae-Won Kim, Kee-Ho Joo, Young-Chang |
| description | The effect of the type of capping layer and post-CMP surface treatments on the adhesion between damascene Cu and the capping layer was investigated. The CMPed-surface was treated by six methods divided into four groups which consisted of no surface treatment, cleaning by plasma with vacuum break, cleaning by plasma without vacuum break and cleaning by the wet chemical method. SiNx and SiC were used to cap the surface after the post-CMP cleaning. The adhesion strength between Cu and the capping material was measured using a sandwiched structure constructed for the four point bending test. The X-ray photoemission spectroscopy analysis showed that the adhesion strength is related to the interfacial chemical bonds. The adhesion is influenced by the presence of contaminants and residual oxygen which inhibit the bonding of Si and Cu. |
| doi_str_mv | 10.1016/j.mee.2007.11.006 |
| format | Article |
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Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Post-CMP surface treatment</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2008-03, Vol.85 (3), p.621-624 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Adhesion Applied sciences Capping layer Compound structure devices Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Microelectronic fabrication (materials and surfaces technology) Post-CMP surface treatment Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnects |
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