Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning

In this paper, we present a simulation tool for the estimation of diffraction effects during the exposure of complex three-dimensional structures. Different levels of microstructures and substrate cause diffraction effects during the exposure which lead to a distortion of the original mask pattern....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Sensors and actuators. A. Physical. 2008-03, Vol.142 (1), p.429-433
Hauptverfasser:	Triltsch, U., Feldmann, M., Boese, C., Büttgenbach, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electro-depositable photo resist Mask design tool Proximity correction
Online-Zugang:	Volltext
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