Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning
In this paper, we present a simulation tool for the estimation of diffraction effects during the exposure of complex three-dimensional structures. Different levels of microstructures and substrate cause diffraction effects during the exposure which lead to a distortion of the original mask pattern....
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| Veröffentlicht in: | Sensors and actuators. A. Physical. 2008-03, Vol.142 (1), p.429-433 |
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| container_end_page | 433 |
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| container_issue | 1 |
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| container_title | Sensors and actuators. A. Physical. |
| container_volume | 142 |
| creator | Triltsch, U. Feldmann, M. Boese, C. Büttgenbach, S. |
| description | In this paper, we present a simulation tool for the estimation of diffraction effects during the exposure of complex three-dimensional structures. Different levels of microstructures and substrate cause diffraction effects during the exposure which lead to a distortion of the original mask pattern. The simulation tool enables a designer to calculate intensity profiles on the resist surface and to estimate the impact of diffraction effects on the resulting resist pattern. The simulation method and the used algorithm is described in detail. Finally, an example is used to show how the tool can be used for the optimization of mask structures by adding compensation structures. |
| doi_str_mv | 10.1016/j.sna.2007.04.034 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_32139181</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0924424707003007</els_id><sourcerecordid>32139181</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-e25a1d78e29fc8749229fe38e1003c98a67f677ba9bb5c27c215976a202a1fed3</originalsourceid><addsrcrecordid>eNp9kMtOwzAQRS0EEuXxAey8YpfgRxrHYoUqXlIlFlC2luuMG1dJHGwX0b_HVVmzmhnpntHMQeiGkpISWt9tyzjqkhEiSlKVhFcnaEYbwQtOanmKZkSyqqhYJc7RRYxbQgjnQszQ6t0Nu14n50ecvO-x9QFPwf-4waU9BmvBpIjdiDu36bCOU55xOAB49Vn0LnV-E_TUOYMnnRKE0Y2bK3RmdR_h-q9eotXT48fipVi-Pb8uHpaF4axJBbC5pq1ogElrGlFJlhvgDdB8npGNroWthVhruV7PDROG0bkUtWaEaWqh5Zfo9rg3X_y1g5jU4KKBvtcj-F1UnFEuaUNzkB6DJvgYA1g1BTfosFeUqINAtVVZoDoIVKRSWWBm7o8M5A--HQQVjYPRQOtClqBa7_6hfwFFeXna</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>32139181</pqid></control><display><type>article</type><title>Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning</title><source>Elsevier ScienceDirect Journals</source><creator>Triltsch, U. ; Feldmann, M. ; Boese, C. ; Büttgenbach, S.</creator><creatorcontrib>Triltsch, U. ; Feldmann, M. ; Boese, C. ; Büttgenbach, S.</creatorcontrib><description>In this paper, we present a simulation tool for the estimation of diffraction effects during the exposure of complex three-dimensional structures. Different levels of microstructures and substrate cause diffraction effects during the exposure which lead to a distortion of the original mask pattern. The simulation tool enables a designer to calculate intensity profiles on the resist surface and to estimate the impact of diffraction effects on the resulting resist pattern. The simulation method and the used algorithm is described in detail. Finally, an example is used to show how the tool can be used for the optimization of mask structures by adding compensation structures.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2007.04.034</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Electro-depositable photo resist ; Mask design tool ; Proximity correction</subject><ispartof>Sensors and actuators. A. Physical., 2008-03, Vol.142 (1), p.429-433</ispartof><rights>2007 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-e25a1d78e29fc8749229fe38e1003c98a67f677ba9bb5c27c215976a202a1fed3</citedby><cites>FETCH-LOGICAL-c328t-e25a1d78e29fc8749229fe38e1003c98a67f677ba9bb5c27c215976a202a1fed3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0924424707003007$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Triltsch, U.</creatorcontrib><creatorcontrib>Feldmann, M.</creatorcontrib><creatorcontrib>Boese, C.</creatorcontrib><creatorcontrib>Büttgenbach, S.</creatorcontrib><title>Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning</title><title>Sensors and actuators. A. Physical.</title><description>In this paper, we present a simulation tool for the estimation of diffraction effects during the exposure of complex three-dimensional structures. Different levels of microstructures and substrate cause diffraction effects during the exposure which lead to a distortion of the original mask pattern. The simulation tool enables a designer to calculate intensity profiles on the resist surface and to estimate the impact of diffraction effects on the resulting resist pattern. The simulation method and the used algorithm is described in detail. Finally, an example is used to show how the tool can be used for the optimization of mask structures by adding compensation structures.</description><subject>Electro-depositable photo resist</subject><subject>Mask design tool</subject><subject>Proximity correction</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRS0EEuXxAey8YpfgRxrHYoUqXlIlFlC2luuMG1dJHGwX0b_HVVmzmhnpntHMQeiGkpISWt9tyzjqkhEiSlKVhFcnaEYbwQtOanmKZkSyqqhYJc7RRYxbQgjnQszQ6t0Nu14n50ecvO-x9QFPwf-4waU9BmvBpIjdiDu36bCOU55xOAB49Vn0LnV-E_TUOYMnnRKE0Y2bK3RmdR_h-q9eotXT48fipVi-Pb8uHpaF4axJBbC5pq1ogElrGlFJlhvgDdB8npGNroWthVhruV7PDROG0bkUtWaEaWqh5Zfo9rg3X_y1g5jU4KKBvtcj-F1UnFEuaUNzkB6DJvgYA1g1BTfosFeUqINAtVVZoDoIVKRSWWBm7o8M5A--HQQVjYPRQOtClqBa7_6hfwFFeXna</recordid><startdate>20080310</startdate><enddate>20080310</enddate><creator>Triltsch, U.</creator><creator>Feldmann, M.</creator><creator>Boese, C.</creator><creator>Büttgenbach, S.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20080310</creationdate><title>Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning</title><author>Triltsch, U. ; Feldmann, M. ; Boese, C. ; Büttgenbach, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-e25a1d78e29fc8749229fe38e1003c98a67f677ba9bb5c27c215976a202a1fed3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Electro-depositable photo resist</topic><topic>Mask design tool</topic><topic>Proximity correction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Triltsch, U.</creatorcontrib><creatorcontrib>Feldmann, M.</creatorcontrib><creatorcontrib>Boese, C.</creatorcontrib><creatorcontrib>Büttgenbach, S.</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Triltsch, U.</au><au>Feldmann, M.</au><au>Boese, C.</au><au>Büttgenbach, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2008-03-10</date><risdate>2008</risdate><volume>142</volume><issue>1</issue><spage>429</spage><epage>433</epage><pages>429-433</pages><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>In this paper, we present a simulation tool for the estimation of diffraction effects during the exposure of complex three-dimensional structures. Different levels of microstructures and substrate cause diffraction effects during the exposure which lead to a distortion of the original mask pattern. The simulation tool enables a designer to calculate intensity profiles on the resist surface and to estimate the impact of diffraction effects on the resulting resist pattern. The simulation method and the used algorithm is described in detail. Finally, an example is used to show how the tool can be used for the optimization of mask structures by adding compensation structures.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2007.04.034</doi><tpages>5</tpages></addata></record> |
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| ispartof | Sensors and actuators. A. Physical., 2008-03, Vol.142 (1), p.429-433 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Electro-depositable photo resist Mask design tool Proximity correction |
| title | Simulation tool for proximity effects in high aspect ratio UV-lithographic patterning |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T10%3A20%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Simulation%20tool%20for%20proximity%20effects%20in%20high%20aspect%20ratio%20UV-lithographic%20patterning&rft.jtitle=Sensors%20and%20actuators.%20A.%20Physical.&rft.au=Triltsch,%20U.&rft.date=2008-03-10&rft.volume=142&rft.issue=1&rft.spage=429&rft.epage=433&rft.pages=429-433&rft.issn=0924-4247&rft.eissn=1873-3069&rft_id=info:doi/10.1016/j.sna.2007.04.034&rft_dat=%3Cproquest_cross%3E32139181%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=32139181&rft_id=info:pmid/&rft_els_id=S0924424707003007&rfr_iscdi=true |