Room-Temperature Self-Organizing Characteristics of Soluble Acene Field-Effect Transistors

We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced functional materials 2008-02, Vol.18 (4), p.560-565
Hauptverfasser: Lee, Wi Hyoung, Lim, Jung Ah, Kim, Do Hwan, Cho, Jeong Ho, Jang, Yunseok, Kim, Yong Hoon, Han, Jeong In, Cho, Kilwon
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 565
container_issue 4
container_start_page 560
container_title Advanced functional materials
container_volume 18
creator Lee, Wi Hyoung
Lim, Jung Ah
Kim, Do Hwan
Cho, Jeong Ho
Jang, Yunseok
Kim, Yong Hoon
Han, Jeong In
Cho, Kilwon
description We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films changed dramatically with time, and the field‐effect mobility of FETs based on these films increased about 100‐fold after seven days as a result of the change in molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational change to an energetically stable state in spin‐coated TES‐ADT films, because TES‐ADT has a low glass‐transition temperature (around room temperature). Our findings demonstrate that organic small‐molecule semiconductors that exhibit a low crystallinity immediately after spin‐coating can be changed into highly crystalline structures by spontaneous self‐organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors. Spontaneous self‐organization at room temperature induces dramatic changes in the morphology of triethylsilylethynyl‐anthradithiophene films over a couple of days. The field‐effect mobility of field‐effect transistors based on these films increases about 100‐fold after 7 days as a result of the change of molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film (see figure)
doi_str_mv 10.1002/adfm.200701087
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_32133666</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>32133666</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4247-33493336244816bd236a76d87f7421948417ef07c42f431ac928887f9bb1ac8e3</originalsourceid><addsrcrecordid>eNqFkDtPwzAURiMEEqWwMmdiS_ELOxmrQguipRItD7FYTnJdDHkUOxGUX4-roIqN6d6re843fEFwitEAI0TOVa7LAUFIIIxisRf0MMc8oojE-7sdPx8GR869IYSFoKwXvNzXdRktoVyDVU1rIVxAoaO5XanKfJtqFY5elVVZA9a4xmQurHW4qIs2LSAcZlBBODZQ5NGV1pA14dKqynmytu44ONCqcHDyO_vBw_hqObqOpvPJzWg4jTJGmIgoZQmllBPGYszTnFCuBM9joQUjOGExwwI0Ep7WjGKVJSSO_TdJU3_EQPvBWZe7tvVHC66RpXEZFIWqoG6dpAT7eM49OOjAzNbOWdBybU2p7EZiJLcVym2FclehF5JO-DQFbP6h5fByPPvrRp3ry4Cvnavsu-SCigv5dDeRj6MFuWV4Jif0BxXrhAQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>32133666</pqid></control><display><type>article</type><title>Room-Temperature Self-Organizing Characteristics of Soluble Acene Field-Effect Transistors</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Lee, Wi Hyoung ; Lim, Jung Ah ; Kim, Do Hwan ; Cho, Jeong Ho ; Jang, Yunseok ; Kim, Yong Hoon ; Han, Jeong In ; Cho, Kilwon</creator><creatorcontrib>Lee, Wi Hyoung ; Lim, Jung Ah ; Kim, Do Hwan ; Cho, Jeong Ho ; Jang, Yunseok ; Kim, Yong Hoon ; Han, Jeong In ; Cho, Kilwon</creatorcontrib><description>We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films changed dramatically with time, and the field‐effect mobility of FETs based on these films increased about 100‐fold after seven days as a result of the change in molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational change to an energetically stable state in spin‐coated TES‐ADT films, because TES‐ADT has a low glass‐transition temperature (around room temperature). Our findings demonstrate that organic small‐molecule semiconductors that exhibit a low crystallinity immediately after spin‐coating can be changed into highly crystalline structures by spontaneous self‐organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors. Spontaneous self‐organization at room temperature induces dramatic changes in the morphology of triethylsilylethynyl‐anthradithiophene films over a couple of days. The field‐effect mobility of field‐effect transistors based on these films increases about 100‐fold after 7 days as a result of the change of molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film (see figure)</description><identifier>ISSN: 1616-301X</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.200701087</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><ispartof>Advanced functional materials, 2008-02, Vol.18 (4), p.560-565</ispartof><rights>Copyright © 2008 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4247-33493336244816bd236a76d87f7421948417ef07c42f431ac928887f9bb1ac8e3</citedby><cites>FETCH-LOGICAL-c4247-33493336244816bd236a76d87f7421948417ef07c42f431ac928887f9bb1ac8e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadfm.200701087$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadfm.200701087$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Lee, Wi Hyoung</creatorcontrib><creatorcontrib>Lim, Jung Ah</creatorcontrib><creatorcontrib>Kim, Do Hwan</creatorcontrib><creatorcontrib>Cho, Jeong Ho</creatorcontrib><creatorcontrib>Jang, Yunseok</creatorcontrib><creatorcontrib>Kim, Yong Hoon</creatorcontrib><creatorcontrib>Han, Jeong In</creatorcontrib><creatorcontrib>Cho, Kilwon</creatorcontrib><title>Room-Temperature Self-Organizing Characteristics of Soluble Acene Field-Effect Transistors</title><title>Advanced functional materials</title><addtitle>Adv. Funct. Mater</addtitle><description>We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films changed dramatically with time, and the field‐effect mobility of FETs based on these films increased about 100‐fold after seven days as a result of the change in molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational change to an energetically stable state in spin‐coated TES‐ADT films, because TES‐ADT has a low glass‐transition temperature (around room temperature). Our findings demonstrate that organic small‐molecule semiconductors that exhibit a low crystallinity immediately after spin‐coating can be changed into highly crystalline structures by spontaneous self‐organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors. Spontaneous self‐organization at room temperature induces dramatic changes in the morphology of triethylsilylethynyl‐anthradithiophene films over a couple of days. The field‐effect mobility of field‐effect transistors based on these films increases about 100‐fold after 7 days as a result of the change of molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film (see figure)</description><issn>1616-301X</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAURiMEEqWwMmdiS_ELOxmrQguipRItD7FYTnJdDHkUOxGUX4-roIqN6d6re843fEFwitEAI0TOVa7LAUFIIIxisRf0MMc8oojE-7sdPx8GR869IYSFoKwXvNzXdRktoVyDVU1rIVxAoaO5XanKfJtqFY5elVVZA9a4xmQurHW4qIs2LSAcZlBBODZQ5NGV1pA14dKqynmytu44ONCqcHDyO_vBw_hqObqOpvPJzWg4jTJGmIgoZQmllBPGYszTnFCuBM9joQUjOGExwwI0Ep7WjGKVJSSO_TdJU3_EQPvBWZe7tvVHC66RpXEZFIWqoG6dpAT7eM49OOjAzNbOWdBybU2p7EZiJLcVym2FclehF5JO-DQFbP6h5fByPPvrRp3ry4Cvnavsu-SCigv5dDeRj6MFuWV4Jif0BxXrhAQ</recordid><startdate>20080222</startdate><enddate>20080222</enddate><creator>Lee, Wi Hyoung</creator><creator>Lim, Jung Ah</creator><creator>Kim, Do Hwan</creator><creator>Cho, Jeong Ho</creator><creator>Jang, Yunseok</creator><creator>Kim, Yong Hoon</creator><creator>Han, Jeong In</creator><creator>Cho, Kilwon</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080222</creationdate><title>Room-Temperature Self-Organizing Characteristics of Soluble Acene Field-Effect Transistors</title><author>Lee, Wi Hyoung ; Lim, Jung Ah ; Kim, Do Hwan ; Cho, Jeong Ho ; Jang, Yunseok ; Kim, Yong Hoon ; Han, Jeong In ; Cho, Kilwon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4247-33493336244816bd236a76d87f7421948417ef07c42f431ac928887f9bb1ac8e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Wi Hyoung</creatorcontrib><creatorcontrib>Lim, Jung Ah</creatorcontrib><creatorcontrib>Kim, Do Hwan</creatorcontrib><creatorcontrib>Cho, Jeong Ho</creatorcontrib><creatorcontrib>Jang, Yunseok</creatorcontrib><creatorcontrib>Kim, Yong Hoon</creatorcontrib><creatorcontrib>Han, Jeong In</creatorcontrib><creatorcontrib>Cho, Kilwon</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Wi Hyoung</au><au>Lim, Jung Ah</au><au>Kim, Do Hwan</au><au>Cho, Jeong Ho</au><au>Jang, Yunseok</au><au>Kim, Yong Hoon</au><au>Han, Jeong In</au><au>Cho, Kilwon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-Temperature Self-Organizing Characteristics of Soluble Acene Field-Effect Transistors</atitle><jtitle>Advanced functional materials</jtitle><addtitle>Adv. Funct. Mater</addtitle><date>2008-02-22</date><risdate>2008</risdate><volume>18</volume><issue>4</issue><spage>560</spage><epage>565</epage><pages>560-565</pages><issn>1616-301X</issn><eissn>1616-3028</eissn><abstract>We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films changed dramatically with time, and the field‐effect mobility of FETs based on these films increased about 100‐fold after seven days as a result of the change in molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational change to an energetically stable state in spin‐coated TES‐ADT films, because TES‐ADT has a low glass‐transition temperature (around room temperature). Our findings demonstrate that organic small‐molecule semiconductors that exhibit a low crystallinity immediately after spin‐coating can be changed into highly crystalline structures by spontaneous self‐organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors. Spontaneous self‐organization at room temperature induces dramatic changes in the morphology of triethylsilylethynyl‐anthradithiophene films over a couple of days. The field‐effect mobility of field‐effect transistors based on these films increases about 100‐fold after 7 days as a result of the change of molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film (see figure)</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/adfm.200701087</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1616-301X
ispartof Advanced functional materials, 2008-02, Vol.18 (4), p.560-565
issn 1616-301X
1616-3028
language eng
recordid cdi_proquest_miscellaneous_32133666
source Wiley Online Library Journals Frontfile Complete
title Room-Temperature Self-Organizing Characteristics of Soluble Acene Field-Effect Transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T18%3A33%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-Temperature%20Self-Organizing%20Characteristics%20of%20Soluble%20Acene%20Field-Effect%20Transistors&rft.jtitle=Advanced%20functional%20materials&rft.au=Lee,%20Wi%20Hyoung&rft.date=2008-02-22&rft.volume=18&rft.issue=4&rft.spage=560&rft.epage=565&rft.pages=560-565&rft.issn=1616-301X&rft.eissn=1616-3028&rft_id=info:doi/10.1002/adfm.200701087&rft_dat=%3Cproquest_cross%3E32133666%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=32133666&rft_id=info:pmid/&rfr_iscdi=true