Etching characteristics of photoresist and low-k dielectrics by Ar/O2 ferrite-core inductively coupled plasmas

We have investigated the characteristics of Ar/O2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O2/(O2+Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Microelectronic engineering 2008-02, Vol.85 (2), p.300-303
Hauptverfasser:	HYOUN WOO KIM, JONG WOO LEE, JOO, Junghoon, CHIN WOOK CHUNG, WAN JAE PARK, KANG, Chang-Jin, JOO, Sukho, SOON OH PARK, YOO, Chung-Gon, SUNG KYEONG KIM, JOUNG HO LEE, CHO, Sang-Deog, WOON SUK HWANG, CHOI, Dae-Kyu, KIM, Keeho, JANG, Jeong-Yeol, BEOM HOAN O, SEUNG GOL LEE, PARK, Se-Geun, KIM, Joohee, DUCK JIN CHUNG, SUNG PIL CHANG, JOO, Young-Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We have investigated the characteristics of Ar/O2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O2/(O2+Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-k material decreased with decreasing O2/(O2+Ar) gas flow ratio.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2007.06.016