Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition
Highly transparent conductive Dy 2O 3 doped zinc oxide (ZnO) 1– x (Dy 2O 3) x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy 2O 3 doped thin films were investigated...
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| Veröffentlicht in: | Applied surface science 2008-01, Vol.254 (7), p.2013-2016 |
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| container_title | Applied surface science |
| container_volume | 254 |
| creator | Huang, Huiming Ou, Yangjun Xu, Sheng Fang, Guojia Li, Meiya Zhao, X.Z. |
| description | Highly transparent conductive Dy
2O
3 doped zinc oxide (ZnO)
1–
x
(Dy
2O
3)
x
nanocrystalline thin films with
x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy
2O
3 doped thin films were investigated as a function of the
x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02
×
10
−4
Ω
cm with
x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of
x value. On the contrary, the optical direct band gap of the (ZnO)
1–
x
(Dy
2O
3)
x
films first increased, then decreased with
x increasing. The average transmission of Dy
2O
3 doped zinc oxide films in the visible range is above 90%. |
| doi_str_mv | 10.1016/j.apsusc.2007.08.041 |
| format | Article |
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2O
3 doped zinc oxide (ZnO)
1–
x
(Dy
2O
3)
x
nanocrystalline thin films with
x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy
2O
3 doped thin films were investigated as a function of the
x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02
×
10
−4
Ω
cm with
x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of
x value. On the contrary, the optical direct band gap of the (ZnO)
1–
x
(Dy
2O
3)
x
films first increased, then decreased with
x increasing. The average transmission of Dy
2O
3 doped zinc oxide films in the visible range is above 90%.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2007.08.041</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Doped zinc oxide ; Pulsed laser deposition ; Thin film ; Transparent-conductive oxide</subject><ispartof>Applied surface science, 2008-01, Vol.254 (7), p.2013-2016</ispartof><rights>2007 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-7ffb312943d2fb4f0cc5a2edc07d7924f94df8e09111d0404f0f833cd8996f113</citedby><cites>FETCH-LOGICAL-c403t-7ffb312943d2fb4f0cc5a2edc07d7924f94df8e09111d0404f0f833cd8996f113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2007.08.041$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids></links><search><creatorcontrib>Huang, Huiming</creatorcontrib><creatorcontrib>Ou, Yangjun</creatorcontrib><creatorcontrib>Xu, Sheng</creatorcontrib><creatorcontrib>Fang, Guojia</creatorcontrib><creatorcontrib>Li, Meiya</creatorcontrib><creatorcontrib>Zhao, X.Z.</creatorcontrib><title>Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition</title><title>Applied surface science</title><description>Highly transparent conductive Dy
2O
3 doped zinc oxide (ZnO)
1–
x
(Dy
2O
3)
x
nanocrystalline thin films with
x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy
2O
3 doped thin films were investigated as a function of the
x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02
×
10
−4
Ω
cm with
x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of
x value. On the contrary, the optical direct band gap of the (ZnO)
1–
x
(Dy
2O
3)
x
films first increased, then decreased with
x increasing. The average transmission of Dy
2O
3 doped zinc oxide films in the visible range is above 90%.</description><subject>Doped zinc oxide</subject><subject>Pulsed laser deposition</subject><subject>Thin film</subject><subject>Transparent-conductive oxide</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAUhYMoOI7-AxdZuWvNq226EcQ3DIwLXegmZJIbzNBpatIR-u_NUNeu7r2c7xy4B6FLSkpKaH29LfWQ9smUjJCmJLIkgh6hBZUNL6pKimO0yFhbCM7ZKTpLaUsIZVldoI_XGAaIo4eEg8P3U2HzbfFnv8a97oOJUxp11_ke8Pjle-x8t0t4iDDomLnNhId9l_LW6QQRWxhC8qMP_Tk6cTorF39zid4fH97unovV-unl7nZVGEH4WDTObThlreCWuY1wxJhKM7CGNLZpmXCtsE4CaSmllgiSCSc5N1a2be0o5Ut0NecOMXzvIY1q55OBrtM9hH1SnMq6rlibQTGDJoaUIjg1RL_TcVKUqEOPaqvmHtWhR0Wkyj1m281sg_zEj4eokvHQG7A-ghmVDf7_gF-Rc386</recordid><startdate>20080130</startdate><enddate>20080130</enddate><creator>Huang, Huiming</creator><creator>Ou, Yangjun</creator><creator>Xu, Sheng</creator><creator>Fang, Guojia</creator><creator>Li, Meiya</creator><creator>Zhao, X.Z.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080130</creationdate><title>Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition</title><author>Huang, Huiming ; Ou, Yangjun ; Xu, Sheng ; Fang, Guojia ; Li, Meiya ; Zhao, X.Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-7ffb312943d2fb4f0cc5a2edc07d7924f94df8e09111d0404f0f833cd8996f113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Doped zinc oxide</topic><topic>Pulsed laser deposition</topic><topic>Thin film</topic><topic>Transparent-conductive oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Huiming</creatorcontrib><creatorcontrib>Ou, Yangjun</creatorcontrib><creatorcontrib>Xu, Sheng</creatorcontrib><creatorcontrib>Fang, Guojia</creatorcontrib><creatorcontrib>Li, Meiya</creatorcontrib><creatorcontrib>Zhao, X.Z.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Huiming</au><au>Ou, Yangjun</au><au>Xu, Sheng</au><au>Fang, Guojia</au><au>Li, Meiya</au><au>Zhao, X.Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition</atitle><jtitle>Applied surface science</jtitle><date>2008-01-30</date><risdate>2008</risdate><volume>254</volume><issue>7</issue><spage>2013</spage><epage>2016</epage><pages>2013-2016</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Highly transparent conductive Dy
2O
3 doped zinc oxide (ZnO)
1–
x
(Dy
2O
3)
x
nanocrystalline thin films with
x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy
2O
3 doped thin films were investigated as a function of the
x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02
×
10
−4
Ω
cm with
x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of
x value. On the contrary, the optical direct band gap of the (ZnO)
1–
x
(Dy
2O
3)
x
films first increased, then decreased with
x increasing. The average transmission of Dy
2O
3 doped zinc oxide films in the visible range is above 90%.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2007.08.041</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0169-4332 |
| ispartof | Applied surface science, 2008-01, Vol.254 (7), p.2013-2016 |
| issn | 0169-4332 1873-5584 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_31866529 |
| source | Elsevier ScienceDirect Journals Complete - AutoHoldings |
| subjects | Doped zinc oxide Pulsed laser deposition Thin film Transparent-conductive oxide |
| title | Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition |
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