Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is...

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Veröffentlicht in:	Electronics letters 2008-01, Vol.44 (2), p.159-160
Hauptverfasser:	CHOI, C.-J, JANG, M.-G, KIM, Y.-Y, JUN, M.-S, KIM, T.-Y, LEE, S.-J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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creator	CHOI, C.-J JANG, M.-G KIM, Y.-Y JUN, M.-S KIM, T.-Y LEE, S.-J
description	The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.
doi_str_mv	10.1049/el:20081645
format	Article
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subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm
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