A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon

A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon

Two high- k gate stacks with the structure Si/SiO 2/HfO 2/TiN/poly-Si are characterised using nanoanalytical electron microscopy. The effect of two key changes to the processing steps during the fabrication of the stacks is investigated. Electron energy-loss spectroscopy is used to show that the TiN...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2008, Vol.85 (1), p.61-64
Hauptverfasser: Docherty, F.T., MacKenzie, M., Craven, A.J., McComb, D.W., Gendt, S. De, McFadzean, S., McGilvery, C.M.
Format: Artikel
Sprache:eng
Schlagworte:
EELS
ELNES
High- k dielectric stacks
Nanoanalytical electron microscopy
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 64
container_issue 1
container_start_page 61
container_title Microelectronic engineering
container_volume 85
creator Docherty, F.T.
MacKenzie, M.
Craven, A.J.
McComb, D.W.
Gendt, S. De
McFadzean, S.
McGilvery, C.M.
description Two high- k gate stacks with the structure Si/SiO 2/HfO 2/TiN/poly-Si are characterised using nanoanalytical electron microscopy. The effect of two key changes to the processing steps during the fabrication of the stacks is investigated. Electron energy-loss spectroscopy is used to show that the TiN layer has a very similar composition whether it is deposited by PVD or ALD. Spectrum imaging in the electron microscope was used to profile the distribution of elements across the layers in the stack. It was found that when the anneal after HfO 2 deposition is carried out in a NH 3 atmosphere instead of an O 2 atmosphere, there is diffusion of N into the SiO 2 and HfO 2 layers. There is also significant intermixing of the layers at the interfaces for both wafers.
doi_str_mv 10.1016/j.mee.2007.03.001
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_31834087</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931707003383</els_id><sourcerecordid>31834087</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-fee3d16a51946a952f50b63f932b246e230398e52d28b0d6158c3ddd6d6b96653</originalsourceid><addsrcrecordid>eNp9kDtPwzAUhS0EEqXwA9g8sSX40TiOmKqKl1SJBWbLsW9at6ld4rQS_55blZnpDuf7rnQOIfeclZxx9bgpdwClYKwumSwZ4xdkwnUti6pS-pJMkKmLRvL6mtzkvEFAzZiekG5Oo43JRtv_jMHZnoZ4hDyGlR1DijR1FHrYQRwx8iGPQ2gPpyQjSNdhtS7oFgOEHGaOogc0j9ZtM0U_hz64FG_JVWf7DHd_d0q-Xp4_F2_F8uP1fTFfFk4KPRYdgPRc2Yo3M2WbSnQVa5XsGilaMVMgJJONhkp4oVvmFa-0k9575VXbKFXJKXk4_90P6fuAPcwuZAd9byOkQzaSa4m9awT5GXRDynmAzuyHsLPDj-HMnBY1G4OLmtOihkmDg6HzdHYAGxwDDCa7ANGBDwO2Nz6Ff-xfU21_Zw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>31834087</pqid></control><display><type>article</type><title>A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Docherty, F.T. ; MacKenzie, M. ; Craven, A.J. ; McComb, D.W. ; Gendt, S. De ; McFadzean, S. ; McGilvery, C.M.</creator><creatorcontrib>Docherty, F.T. ; MacKenzie, M. ; Craven, A.J. ; McComb, D.W. ; Gendt, S. De ; McFadzean, S. ; McGilvery, C.M.</creatorcontrib><description>Two high- k gate stacks with the structure Si/SiO 2/HfO 2/TiN/poly-Si are characterised using nanoanalytical electron microscopy. The effect of two key changes to the processing steps during the fabrication of the stacks is investigated. Electron energy-loss spectroscopy is used to show that the TiN layer has a very similar composition whether it is deposited by PVD or ALD. Spectrum imaging in the electron microscope was used to profile the distribution of elements across the layers in the stack. It was found that when the anneal after HfO 2 deposition is carried out in a NH 3 atmosphere instead of an O 2 atmosphere, there is diffusion of N into the SiO 2 and HfO 2 layers. There is also significant intermixing of the layers at the interfaces for both wafers.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2007.03.001</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>EELS ; ELNES ; High- k dielectric stacks ; Nanoanalytical electron microscopy</subject><ispartof>Microelectronic engineering, 2008, Vol.85 (1), p.61-64</ispartof><rights>2007 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-fee3d16a51946a952f50b63f932b246e230398e52d28b0d6158c3ddd6d6b96653</citedby><cites>FETCH-LOGICAL-c328t-fee3d16a51946a952f50b63f932b246e230398e52d28b0d6158c3ddd6d6b96653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2007.03.001$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3541,4014,27914,27915,27916,45986</link.rule.ids></links><search><creatorcontrib>Docherty, F.T.</creatorcontrib><creatorcontrib>MacKenzie, M.</creatorcontrib><creatorcontrib>Craven, A.J.</creatorcontrib><creatorcontrib>McComb, D.W.</creatorcontrib><creatorcontrib>Gendt, S. De</creatorcontrib><creatorcontrib>McFadzean, S.</creatorcontrib><creatorcontrib>McGilvery, C.M.</creatorcontrib><title>A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon</title><title>Microelectronic engineering</title><description>Two high- k gate stacks with the structure Si/SiO 2/HfO 2/TiN/poly-Si are characterised using nanoanalytical electron microscopy. The effect of two key changes to the processing steps during the fabrication of the stacks is investigated. Electron energy-loss spectroscopy is used to show that the TiN layer has a very similar composition whether it is deposited by PVD or ALD. Spectrum imaging in the electron microscope was used to profile the distribution of elements across the layers in the stack. It was found that when the anneal after HfO 2 deposition is carried out in a NH 3 atmosphere instead of an O 2 atmosphere, there is diffusion of N into the SiO 2 and HfO 2 layers. There is also significant intermixing of the layers at the interfaces for both wafers.</description><subject>EELS</subject><subject>ELNES</subject><subject>High- k dielectric stacks</subject><subject>Nanoanalytical electron microscopy</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kDtPwzAUhS0EEqXwA9g8sSX40TiOmKqKl1SJBWbLsW9at6ld4rQS_55blZnpDuf7rnQOIfeclZxx9bgpdwClYKwumSwZ4xdkwnUti6pS-pJMkKmLRvL6mtzkvEFAzZiekG5Oo43JRtv_jMHZnoZ4hDyGlR1DijR1FHrYQRwx8iGPQ2gPpyQjSNdhtS7oFgOEHGaOogc0j9ZtM0U_hz64FG_JVWf7DHd_d0q-Xp4_F2_F8uP1fTFfFk4KPRYdgPRc2Yo3M2WbSnQVa5XsGilaMVMgJJONhkp4oVvmFa-0k9575VXbKFXJKXk4_90P6fuAPcwuZAd9byOkQzaSa4m9awT5GXRDynmAzuyHsLPDj-HMnBY1G4OLmtOihkmDg6HzdHYAGxwDDCa7ANGBDwO2Nz6Ff-xfU21_Zw</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Docherty, F.T.</creator><creator>MacKenzie, M.</creator><creator>Craven, A.J.</creator><creator>McComb, D.W.</creator><creator>Gendt, S. De</creator><creator>McFadzean, S.</creator><creator>McGilvery, C.M.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2008</creationdate><title>A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon</title><author>Docherty, F.T. ; MacKenzie, M. ; Craven, A.J. ; McComb, D.W. ; Gendt, S. De ; McFadzean, S. ; McGilvery, C.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-fee3d16a51946a952f50b63f932b246e230398e52d28b0d6158c3ddd6d6b96653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>EELS</topic><topic>ELNES</topic><topic>High- k dielectric stacks</topic><topic>Nanoanalytical electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Docherty, F.T.</creatorcontrib><creatorcontrib>MacKenzie, M.</creatorcontrib><creatorcontrib>Craven, A.J.</creatorcontrib><creatorcontrib>McComb, D.W.</creatorcontrib><creatorcontrib>Gendt, S. De</creatorcontrib><creatorcontrib>McFadzean, S.</creatorcontrib><creatorcontrib>McGilvery, C.M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Docherty, F.T.</au><au>MacKenzie, M.</au><au>Craven, A.J.</au><au>McComb, D.W.</au><au>Gendt, S. De</au><au>McFadzean, S.</au><au>McGilvery, C.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon</atitle><jtitle>Microelectronic engineering</jtitle><date>2008</date><risdate>2008</risdate><volume>85</volume><issue>1</issue><spage>61</spage><epage>64</epage><pages>61-64</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>Two high- k gate stacks with the structure Si/SiO 2/HfO 2/TiN/poly-Si are characterised using nanoanalytical electron microscopy. The effect of two key changes to the processing steps during the fabrication of the stacks is investigated. Electron energy-loss spectroscopy is used to show that the TiN layer has a very similar composition whether it is deposited by PVD or ALD. Spectrum imaging in the electron microscope was used to profile the distribution of elements across the layers in the stack. It was found that when the anneal after HfO 2 deposition is carried out in a NH 3 atmosphere instead of an O 2 atmosphere, there is diffusion of N into the SiO 2 and HfO 2 layers. There is also significant intermixing of the layers at the interfaces for both wafers.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2007.03.001</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0167-9317
ispartof Microelectronic engineering, 2008, Vol.85 (1), p.61-64
issn 0167-9317
1873-5568
language eng
recordid cdi_proquest_miscellaneous_31834087
source ScienceDirect Journals (5 years ago - present)
subjects EELS
ELNES
High- k dielectric stacks
Nanoanalytical electron microscopy
title A nanoanalytical investigation of elemental distributions in high- k dielectric gate stacks on silicon
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T05%3A03%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20nanoanalytical%20investigation%20of%20elemental%20distributions%20in%20high-%20k%20dielectric%20gate%20stacks%20on%20silicon&rft.jtitle=Microelectronic%20engineering&rft.au=Docherty,%20F.T.&rft.date=2008&rft.volume=85&rft.issue=1&rft.spage=61&rft.epage=64&rft.pages=61-64&rft.issn=0167-9317&rft.eissn=1873-5568&rft_id=info:doi/10.1016/j.mee.2007.03.001&rft_dat=%3Cproquest_cross%3E31834087%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=31834087&rft_id=info:pmid/&rft_els_id=S0167931707003383&rfr_iscdi=true