Integrated planar spiral inductors with CoFe and NiFe ferromagnetic layer

Inductance increase up to 28% was obtained for on‐chip spiral inductors by employing DC‐sputtered CoFe and NiFe ferromagnetic (FM) layer on top of the spirals. It was also observed that slit‐patterned FM layers exhibited better quality factors than blanket FM layers, leading to values comparable to...

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Veröffentlicht in:Microwave and optical technology letters 2008-03, Vol.50 (3), p.676-678
Hauptverfasser: Kim, GyoungBum, Cha, Seung-Yong, Hyun, Eun-Kyung, Jung, YoungChai, Choi, YoonSuk, Rieh, Jae-Sung, Lee, Seong-Rae, Hwang, SungWoo
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Sprache:eng
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Zusammenfassung:Inductance increase up to 28% was obtained for on‐chip spiral inductors by employing DC‐sputtered CoFe and NiFe ferromagnetic (FM) layer on top of the spirals. It was also observed that slit‐patterned FM layers exhibited better quality factors than blanket FM layers, leading to values comparable to that of the inductors without FM layer. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 676–678, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23180
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.23180