Low-power single-to-differential LNA at S-band based on optimised transformer topology and integrated ESD
A single-ended to differential low-power low-noise amplifier (LNA) designed and implemented in 0.18mum CMOS technology is presented. The device takes advantadge of a current reuse strategy by stacking two common-source differential transistor pair stages for minimum current dissipation, together wit...
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| Veröffentlicht in: | Electronics letters 2008-01, Vol.44 (3), p.198-199 |
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| container_title | Electronics letters |
| container_volume | 44 |
| creator | GIL, I CAIRO, I SIEIRO, J. J |
| description | A single-ended to differential low-power low-noise amplifier (LNA) designed and implemented in 0.18mum CMOS technology is presented. The device takes advantadge of a current reuse strategy by stacking two common-source differential transistor pair stages for minimum current dissipation, together with the design of optimised high Q differential transformers and inductors in order to minimise the impact of parasitics. The fully integrated, including ESD protection diodes, 2.1GHz LNA consumes 1.1mW at 1.2V supply voltage and presents 29.8dB gain, 4.5dB noise figure, -21.1dBm 1dB compression point, -11.6dBm input third-order intercept point and -12.3dB input return loss performance. |
| doi_str_mv | 10.1049/el:20082898 |
| format | Article |
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The fully integrated, including ESD protection diodes, 2.1GHz LNA consumes 1.1mW at 1.2V supply voltage and presents 29.8dB gain, 4.5dB noise figure, -21.1dBm 1dB compression point, -11.6dBm input third-order intercept point and -12.3dB input return loss performance.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el:20082898</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>London: Institution of Electrical Engineers</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Integrated circuits ; Magnetic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The fully integrated, including ESD protection diodes, 2.1GHz LNA consumes 1.1mW at 1.2V supply voltage and presents 29.8dB gain, 4.5dB noise figure, -21.1dBm 1dB compression point, -11.6dBm input third-order intercept point and -12.3dB input return loss performance.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Magnetic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Magnetic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>GIL, I</creatorcontrib><creatorcontrib>CAIRO, I</creatorcontrib><creatorcontrib>SIEIRO, J. 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| ispartof | Electronics letters, 2008-01, Vol.44 (3), p.198-199 |
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| language | eng |
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| source | Alma/SFX Local Collection |
| subjects | Amplifiers Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Magnetic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Low-power single-to-differential LNA at S-band based on optimised transformer topology and integrated ESD |
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