Electrical phase change of Ga:La:S:Cu films

Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200m in the amorphous state and 40...

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Veröffentlicht in:	Electronics letters 2007-07, Vol.43 (15), p.830-832
Hauptverfasser:	SIMPSON, R. E, MAIRAJ, A, CURRY, R. J, HUANG, C.-C, KNIGHT, K, SESSIONS, N, HASSAN, M, HEWAK, D. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Materials Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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