Electrical phase change of Ga:La:S:Cu films
Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200m in the amorphous state and 40...
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| Veröffentlicht in: | Electronics letters 2007-07, Vol.43 (15), p.830-832 |
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| container_issue | 15 |
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| container_title | Electronics letters |
| container_volume | 43 |
| creator | SIMPSON, R. E MAIRAJ, A CURRY, R. J HUANG, C.-C KNIGHT, K SESSIONS, N HASSAN, M HEWAK, D. W |
| description | Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200m in the amorphous state and 40m in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices. |
| doi_str_mv | 10.1049/el:20071290 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_31771619</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>31771619</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-b8b7ad9bb656c264b212cf4d3183c92826948f4b90e56efd66c81911ee95daa53</originalsourceid><addsrcrecordid>eNpFkEFLAzEQhYMoWKsn_8Be9FJWM8kmu9mblFqFggcVvIXZ7MSupN2atAf_fVda8TQ8-N7jzWPsGvgd8MLcU6gF5yUIw0_YCKTiuQH4OGUjzkHmCkxxzi5S-hqkMKYcsckskNvGzmHINktMlLklrj8p6302x3qB9Ws93WW-C6t0yc48hkRXxztm74-zt-lTvniZP08fFrmTErZ5UzUltqZptNJO6KIRIJwvWgmVdEZUQpui8kVjOClNvtXaVTDUJDKqRVRyzG4PuZvYf-8obe2qS45CwDX1u2QllCVoMAM4OYAu9ilF8nYTuxXGHwvc_g5iKdi_QQb65hiLaXjXR1y7Lv1bKqMlKJB7dCVduQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>31771619</pqid></control><display><type>article</type><title>Electrical phase change of Ga:La:S:Cu films</title><source>Alma/SFX Local Collection</source><creator>SIMPSON, R. E ; MAIRAJ, A ; CURRY, R. J ; HUANG, C.-C ; KNIGHT, K ; SESSIONS, N ; HASSAN, M ; HEWAK, D. W</creator><creatorcontrib>SIMPSON, R. E ; MAIRAJ, A ; CURRY, R. J ; HUANG, C.-C ; KNIGHT, K ; SESSIONS, N ; HASSAN, M ; HEWAK, D. W</creatorcontrib><description>Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200m in the amorphous state and 40m in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el:20071290</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>London: Institution of Electrical Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Materials ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Electronics letters, 2007-07, Vol.43 (15), p.830-832</ispartof><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-b8b7ad9bb656c264b212cf4d3183c92826948f4b90e56efd66c81911ee95daa53</citedby><cites>FETCH-LOGICAL-c331t-b8b7ad9bb656c264b212cf4d3183c92826948f4b90e56efd66c81911ee95daa53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18963151$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SIMPSON, R. E</creatorcontrib><creatorcontrib>MAIRAJ, A</creatorcontrib><creatorcontrib>CURRY, R. J</creatorcontrib><creatorcontrib>HUANG, C.-C</creatorcontrib><creatorcontrib>KNIGHT, K</creatorcontrib><creatorcontrib>SESSIONS, N</creatorcontrib><creatorcontrib>HASSAN, M</creatorcontrib><creatorcontrib>HEWAK, D. W</creatorcontrib><title>Electrical phase change of Ga:La:S:Cu films</title><title>Electronics letters</title><description>Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200m in the amorphous state and 40m in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Materials</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLAzEQhYMoWKsn_8Be9FJWM8kmu9mblFqFggcVvIXZ7MSupN2atAf_fVda8TQ8-N7jzWPsGvgd8MLcU6gF5yUIw0_YCKTiuQH4OGUjzkHmCkxxzi5S-hqkMKYcsckskNvGzmHINktMlLklrj8p6302x3qB9Ws93WW-C6t0yc48hkRXxztm74-zt-lTvniZP08fFrmTErZ5UzUltqZptNJO6KIRIJwvWgmVdEZUQpui8kVjOClNvtXaVTDUJDKqRVRyzG4PuZvYf-8obe2qS45CwDX1u2QllCVoMAM4OYAu9ilF8nYTuxXGHwvc_g5iKdi_QQb65hiLaXjXR1y7Lv1bKqMlKJB7dCVduQ</recordid><startdate>20070719</startdate><enddate>20070719</enddate><creator>SIMPSON, R. E</creator><creator>MAIRAJ, A</creator><creator>CURRY, R. J</creator><creator>HUANG, C.-C</creator><creator>KNIGHT, K</creator><creator>SESSIONS, N</creator><creator>HASSAN, M</creator><creator>HEWAK, D. W</creator><general>Institution of Electrical Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20070719</creationdate><title>Electrical phase change of Ga:La:S:Cu films</title><author>SIMPSON, R. E ; MAIRAJ, A ; CURRY, R. J ; HUANG, C.-C ; KNIGHT, K ; SESSIONS, N ; HASSAN, M ; HEWAK, D. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-b8b7ad9bb656c264b212cf4d3183c92826948f4b90e56efd66c81911ee95daa53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Materials</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SIMPSON, R. E</creatorcontrib><creatorcontrib>MAIRAJ, A</creatorcontrib><creatorcontrib>CURRY, R. J</creatorcontrib><creatorcontrib>HUANG, C.-C</creatorcontrib><creatorcontrib>KNIGHT, K</creatorcontrib><creatorcontrib>SESSIONS, N</creatorcontrib><creatorcontrib>HASSAN, M</creatorcontrib><creatorcontrib>HEWAK, D. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SIMPSON, R. E</au><au>MAIRAJ, A</au><au>CURRY, R. J</au><au>HUANG, C.-C</au><au>KNIGHT, K</au><au>SESSIONS, N</au><au>HASSAN, M</au><au>HEWAK, D. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical phase change of Ga:La:S:Cu films</atitle><jtitle>Electronics letters</jtitle><date>2007-07-19</date><risdate>2007</risdate><volume>43</volume><issue>15</issue><spage>830</spage><epage>832</epage><pages>830-832</pages><issn>0013-5194</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><abstract>Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200m in the amorphous state and 40m in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.</abstract><cop>London</cop><pub>Institution of Electrical Engineers</pub><doi>10.1049/el:20071290</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2007-07, Vol.43 (15), p.830-832 |
| issn | 0013-5194 1350-911X |
| language | eng |
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| source | Alma/SFX Local Collection |
| subjects | Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Materials Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Electrical phase change of Ga:La:S:Cu films |
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