Fabrication and photoluminescence characteristics of Er3+-doped optical fibre sensitised by silicon
Er3+-doped optical fibres co-doped with silicon particles were fabricated by the modified chemical vapour deposition and the solution doping technique. Peak intensity of the photoluminescence at 1560nm upon pumping by a CW Ar-ion laser at 512nm was enhanced by about 70% after the silicon incorporati...
Gespeichert in:
| Veröffentlicht in: | Electronics letters 2007-01, Vol.43 (2), p.85-87 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 87 |
|---|---|
| container_issue | 2 |
| container_start_page | 85 |
| container_title | Electronics letters |
| container_volume | 43 |
| creator | MOON, S KIM, B. H WATEKAR, P. R HAN, W.-T |
| description | Er3+-doped optical fibres co-doped with silicon particles were fabricated by the modified chemical vapour deposition and the solution doping technique. Peak intensity of the photoluminescence at 1560nm upon pumping by a CW Ar-ion laser at 512nm was enhanced by about 70% after the silicon incorporation. |
| doi_str_mv | 10.1049/el:20073559 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_31748742</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>31748742</sourcerecordid><originalsourceid>FETCH-LOGICAL-c188t-4ff37470718c3c6408a6e365d35cce1ff85b63f260cdac30d8d06d3ef212ba463</originalsourceid><addsrcrecordid>eNotT0tLAzEYDKJgrZ78A7noRVaTzXO9SWlVKHhR8LZkvyQ0sk3WJD3037tgT8M8GGYQuqXkkRLePbnxuSVEMSG6M7SgTJCmo_T7HC0IoawRtOOX6KqUn5m2XacWCDZmyAFMDSliEy2edqmm8bAP0RVwERyGnckGqsuh1AAFJ4_XmT00Nk3O4jTNohmxD0N2uLhYQg1lNoYjLmEMkOI1uvBmLO7mhEv0tVl_rt6a7cfr--pl2wDVujbce6a4IopqYCA50UY6JoVlAsBR77UYJPOtJGANMGK1JdIy51vaDoZLtkT3_71TTr8HV2q_D_OHcTTRpUPpGVVcK97OwbtT0JR5u88mQij9lMPe5GNPNZdUCsX-ALsBZok</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>31748742</pqid></control><display><type>article</type><title>Fabrication and photoluminescence characteristics of Er3+-doped optical fibre sensitised by silicon</title><source>Alma/SFX Local Collection</source><creator>MOON, S ; KIM, B. H ; WATEKAR, P. R ; HAN, W.-T</creator><creatorcontrib>MOON, S ; KIM, B. H ; WATEKAR, P. R ; HAN, W.-T</creatorcontrib><description>Er3+-doped optical fibres co-doped with silicon particles were fabricated by the modified chemical vapour deposition and the solution doping technique. Peak intensity of the photoluminescence at 1560nm upon pumping by a CW Ar-ion laser at 512nm was enhanced by about 70% after the silicon incorporation.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el:20073559</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>London: Institution of Electrical Engineers</publisher><subject>Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Integrated optics. Optical fibers and wave guides ; Optical and optoelectronic circuits</subject><ispartof>Electronics letters, 2007-01, Vol.43 (2), p.85-87</ispartof><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c188t-4ff37470718c3c6408a6e365d35cce1ff85b63f260cdac30d8d06d3ef212ba463</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18461657$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MOON, S</creatorcontrib><creatorcontrib>KIM, B. H</creatorcontrib><creatorcontrib>WATEKAR, P. R</creatorcontrib><creatorcontrib>HAN, W.-T</creatorcontrib><title>Fabrication and photoluminescence characteristics of Er3+-doped optical fibre sensitised by silicon</title><title>Electronics letters</title><description>Er3+-doped optical fibres co-doped with silicon particles were fabricated by the modified chemical vapour deposition and the solution doping technique. Peak intensity of the photoluminescence at 1560nm upon pumping by a CW Ar-ion laser at 512nm was enhanced by about 70% after the silicon incorporation.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Optical and optoelectronic circuits</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNotT0tLAzEYDKJgrZ78A7noRVaTzXO9SWlVKHhR8LZkvyQ0sk3WJD3037tgT8M8GGYQuqXkkRLePbnxuSVEMSG6M7SgTJCmo_T7HC0IoawRtOOX6KqUn5m2XacWCDZmyAFMDSliEy2edqmm8bAP0RVwERyGnckGqsuh1AAFJ4_XmT00Nk3O4jTNohmxD0N2uLhYQg1lNoYjLmEMkOI1uvBmLO7mhEv0tVl_rt6a7cfr--pl2wDVujbce6a4IopqYCA50UY6JoVlAsBR77UYJPOtJGANMGK1JdIy51vaDoZLtkT3_71TTr8HV2q_D_OHcTTRpUPpGVVcK97OwbtT0JR5u88mQij9lMPe5GNPNZdUCsX-ALsBZok</recordid><startdate>20070118</startdate><enddate>20070118</enddate><creator>MOON, S</creator><creator>KIM, B. H</creator><creator>WATEKAR, P. R</creator><creator>HAN, W.-T</creator><general>Institution of Electrical Engineers</general><scope>IQODW</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20070118</creationdate><title>Fabrication and photoluminescence characteristics of Er3+-doped optical fibre sensitised by silicon</title><author>MOON, S ; KIM, B. H ; WATEKAR, P. R ; HAN, W.-T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c188t-4ff37470718c3c6408a6e365d35cce1ff85b63f260cdac30d8d06d3ef212ba463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>Optical and optoelectronic circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MOON, S</creatorcontrib><creatorcontrib>KIM, B. H</creatorcontrib><creatorcontrib>WATEKAR, P. R</creatorcontrib><creatorcontrib>HAN, W.-T</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MOON, S</au><au>KIM, B. H</au><au>WATEKAR, P. R</au><au>HAN, W.-T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and photoluminescence characteristics of Er3+-doped optical fibre sensitised by silicon</atitle><jtitle>Electronics letters</jtitle><date>2007-01-18</date><risdate>2007</risdate><volume>43</volume><issue>2</issue><spage>85</spage><epage>87</epage><pages>85-87</pages><issn>0013-5194</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><abstract>Er3+-doped optical fibres co-doped with silicon particles were fabricated by the modified chemical vapour deposition and the solution doping technique. Peak intensity of the photoluminescence at 1560nm upon pumping by a CW Ar-ion laser at 512nm was enhanced by about 70% after the silicon incorporation.</abstract><cop>London</cop><pub>Institution of Electrical Engineers</pub><doi>10.1049/el:20073559</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2007-01, Vol.43 (2), p.85-87 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_31748742 |
| source | Alma/SFX Local Collection |
| subjects | Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated optics. Optical fibers and wave guides Optical and optoelectronic circuits |
| title | Fabrication and photoluminescence characteristics of Er3+-doped optical fibre sensitised by silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T21%3A10%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20and%20photoluminescence%20characteristics%20of%20Er3+-doped%20optical%20fibre%20sensitised%20by%20silicon&rft.jtitle=Electronics%20letters&rft.au=MOON,%20S&rft.date=2007-01-18&rft.volume=43&rft.issue=2&rft.spage=85&rft.epage=87&rft.pages=85-87&rft.issn=0013-5194&rft.eissn=1350-911X&rft.coden=ELLEAK&rft_id=info:doi/10.1049/el:20073559&rft_dat=%3Cproquest_pasca%3E31748742%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=31748742&rft_id=info:pmid/&rfr_iscdi=true |