Damage-free surface treatment of carbon nanotubes and self-assembled monolayer devices using a neutral beam process for fusing top–down and bottom–up processes

Plasma etching processes have been used for the past 30 years to shrink the pattern size of integrated devices. However, the inherent problems of plasma processes, such as ultraviolet photon radiation damage, limit the effectiveness of etching and surface treatments of nanoscale devices. To overcome...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2008-01, Vol.41 (2), p.024006-024006 (6)
Hauptverfasser:	Samukawa, Seiji, Ishikawa, Yasushi, Okumura, Keiji, Sato, Yoshinori, Tohji, Kazuyuki, Ishida, Takao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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