High sensitivity and selectivity of h-BN/WO3 n-n heterojunction to triethylamine at low-temperature

Due to the unique properties of heterojunction interfaces, heterojunction materials have broad application prospects in gas sensors. In this work, a facile and economical two-step synthesis method was employed to fabricate h-BN/WO3 heterojunctions, exhibiting excellent performance in triethylamine (TEA) detection. The results indicate that compared to pure WO3 sensors, h-BN/WO3 sensors exhibit superior TEA sensing capabilities, with an excellent response of 281.45 to 20 ppm TEA at 100 °C, which is 3.4 times higher. Moreover, h-BN/WO3 sensors demonstrate favorable response times, low detection limits, and good stability. These significant enhancements are attributed to the increase in oxygen vacancies and the establishment of heterojunctions between h-BN and WO3. Heterojunctions can regulate the concentration and transport rate of charge carriers, as well as the interface potential barrier, thereby affecting the gas sensing processes. This work may promote the further development of sensing materials and the practical application of WO3 sensors in TEA detection. [Display omitted] •h-BN/WO3 heterojunction was synthesized by a cost-efficient two-step method.•Solvothermal synthesis promoted WO3 tight attach to the surface of h-BN.•The carriers are regulated by the potential barrier and electron depletion layer.•h-BN/WO3 showed superior sensing performance and low detection limit to TEA.