Achieving ZT > 1 in Cu and Ga Co-doped Ag6Ge10P12 with Superior Mechanical Performance and Its Fundamental Physical Properties toward Practical Thermoelectric Device Applications

Recently, phosphorus-based compounds have emerged as potential candidates for thermoelectric materials. One of the key challenges facing this field is to achieve ZT > 1, which is the benchmark for thermoelectric device applications. In this study, it is demonstrated that the thermoelectric perfor...

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Veröffentlicht in:ACS applied materials & interfaces 2024-10, Vol.16 (40), p.54241-54251
Hauptverfasser: Namiki, Hiromasa, Kobayashi, Masahiro, Nishikawa, Yasuhiro, Miyake, Yumiko, Sasaki, Masashi, Tachibana, Naoki
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Sprache:eng
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