Sub‑5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (In2O3) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain curr...

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Veröffentlicht in:	ACS applied materials & interfaces 2024-04, Vol.16 (18), p.23536-23543
Hauptverfasser:	Xu, Linqiang, Xu, Lianqiang, Lan, Jun, Li, Yida, Li, Qiuhui, Wang, Aili, Guo, Ying, Ang, Yee Sin, Quhe, Ruge, Lu, Jing
Format:	Artikel
Sprache:	eng
Schlagworte:	electronics Functional Inorganic Materials and Devices indium nanomaterials
Online-Zugang:	Volltext
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