Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials
Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO ) ), cob...
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| creator | Fazal, Tanzeela Mahmood, Sajid Ismail, Bushra Shah, Mazloom Zidan, Ammar Bahadur, Ali Iqbal, Shahid Rizwan, Komal Alam, Shahid Ali, Fayyaz Farouk, Abd-ElAziem Aloufi, Salman |
| description | Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO
)
), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na
S
O
) and H
O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV-Vis. spectrophotometer and absorption were found stronger in the UV and UV-Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions. |
| doi_str_mv | 10.1002/jemt.24750 |
| format | Article |
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)
), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na
S
O
) and H
O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV-Vis. spectrophotometer and absorption were found stronger in the UV and UV-Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.</description><identifier>ISSN: 1097-0029</identifier><identifier>EISSN: 1097-0029</identifier><identifier>DOI: 10.1002/jemt.24750</identifier><identifier>PMID: 39623755</identifier><language>eng</language><publisher>United States</publisher><ispartof>Microscopy research and technique, 2024-12</ispartof><rights>2024 Wiley Periodicals LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-3866-3216</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39623755$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Fazal, Tanzeela</creatorcontrib><creatorcontrib>Mahmood, Sajid</creatorcontrib><creatorcontrib>Ismail, Bushra</creatorcontrib><creatorcontrib>Shah, Mazloom</creatorcontrib><creatorcontrib>Zidan, Ammar</creatorcontrib><creatorcontrib>Bahadur, Ali</creatorcontrib><creatorcontrib>Iqbal, Shahid</creatorcontrib><creatorcontrib>Rizwan, Komal</creatorcontrib><creatorcontrib>Alam, Shahid</creatorcontrib><creatorcontrib>Ali, Fayyaz</creatorcontrib><creatorcontrib>Farouk, Abd-ElAziem</creatorcontrib><creatorcontrib>Aloufi, Salman</creatorcontrib><title>Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials</title><title>Microscopy research and technique</title><addtitle>Microsc Res Tech</addtitle><description>Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO
)
), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na
S
O
) and H
O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV-Vis. spectrophotometer and absorption were found stronger in the UV and UV-Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.</description><issn>1097-0029</issn><issn>1097-0029</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpNkE1PwkAYhDdGI4he_AFmj16K-9nSIyAgCQYi3Jvd7ltY0u7Wdonh31uiJp5mMs9kDoPQIyVDSgh7OUIVhkwkklyhPiVpEnVpev3P99Bd2x4JoVRScYt6PI0ZT6Tso6-JcgYvVI1nbm8dQGPdHvsCT6xTzRlf6NRrVYbo1ddg8EZv8e5gHZ7bsmrx0gXYNyp0RJ_xdrkaf-B3CAdvcOEbvK6DhxLy0Hhnc7zxAVywqmzv0U3RCTz86gDt5rPd9C1arRfL6XgV1SmjkYlTQRVIOiI5T2KpBRhqqJQmThITF5BKqklOpBipnAsmitEFa56YnOVa8gF6_pmtG_95gjZklW1zKEvlwJ_ajFNBUsYZi7vq02_1pCswWd3Yqnsg-_uKfwNteWoI</recordid><startdate>20241202</startdate><enddate>20241202</enddate><creator>Fazal, Tanzeela</creator><creator>Mahmood, Sajid</creator><creator>Ismail, Bushra</creator><creator>Shah, Mazloom</creator><creator>Zidan, Ammar</creator><creator>Bahadur, Ali</creator><creator>Iqbal, Shahid</creator><creator>Rizwan, Komal</creator><creator>Alam, Shahid</creator><creator>Ali, Fayyaz</creator><creator>Farouk, Abd-ElAziem</creator><creator>Aloufi, Salman</creator><scope>NPM</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-3866-3216</orcidid></search><sort><creationdate>20241202</creationdate><title>Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials</title><author>Fazal, Tanzeela ; Mahmood, Sajid ; Ismail, Bushra ; Shah, Mazloom ; Zidan, Ammar ; Bahadur, Ali ; Iqbal, Shahid ; Rizwan, Komal ; Alam, Shahid ; Ali, Fayyaz ; Farouk, Abd-ElAziem ; Aloufi, Salman</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p921-d6941ae5180c3765b4ed1d155d677d6fe951b0c0548ac3424f81d15b37dc2cb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fazal, Tanzeela</creatorcontrib><creatorcontrib>Mahmood, Sajid</creatorcontrib><creatorcontrib>Ismail, Bushra</creatorcontrib><creatorcontrib>Shah, Mazloom</creatorcontrib><creatorcontrib>Zidan, Ammar</creatorcontrib><creatorcontrib>Bahadur, Ali</creatorcontrib><creatorcontrib>Iqbal, Shahid</creatorcontrib><creatorcontrib>Rizwan, Komal</creatorcontrib><creatorcontrib>Alam, Shahid</creatorcontrib><creatorcontrib>Ali, Fayyaz</creatorcontrib><creatorcontrib>Farouk, Abd-ElAziem</creatorcontrib><creatorcontrib>Aloufi, Salman</creatorcontrib><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Microscopy research and technique</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fazal, Tanzeela</au><au>Mahmood, Sajid</au><au>Ismail, Bushra</au><au>Shah, Mazloom</au><au>Zidan, Ammar</au><au>Bahadur, Ali</au><au>Iqbal, Shahid</au><au>Rizwan, Komal</au><au>Alam, Shahid</au><au>Ali, Fayyaz</au><au>Farouk, Abd-ElAziem</au><au>Aloufi, Salman</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials</atitle><jtitle>Microscopy research and technique</jtitle><addtitle>Microsc Res Tech</addtitle><date>2024-12-02</date><risdate>2024</risdate><issn>1097-0029</issn><eissn>1097-0029</eissn><abstract>Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO
)
), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na
S
O
) and H
O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV-Vis. spectrophotometer and absorption were found stronger in the UV and UV-Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.</abstract><cop>United States</cop><pmid>39623755</pmid><doi>10.1002/jemt.24750</doi><orcidid>https://orcid.org/0000-0003-3866-3216</orcidid></addata></record> |
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| title | Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials |
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