Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon
Recently the present authors’ group found that porous silicon showed strong and stable white/white-blue light emission after successive thermal carbonization and oxidation by water vapor. This material can be considered as a price-competitive solid-state white-light source. We examined these layers...
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| Veröffentlicht in: | Materials science forum 2007-10, Vol.561-565, p.1127-1130 |
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| creator | Ishikawa, Yukari Vasin, A.V. Salonen, Jarno Muto, Shunsuke Shibata, Noriyoshi Lehto, Vesa Pekka |
| description | Recently the present authors’ group found that porous silicon showed strong and stable
white/white-blue light emission after successive thermal carbonization and oxidation by water vapor.
This material can be considered as a price-competitive solid-state white-light source. We examined
these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron
microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was
completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases
were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including
Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images
showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is
assumed that the strong light-emitting properties are controlled by the size and internal chemical
bonding states of carbon clusters incorporated. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.561-565.1127 |
| format | Article |
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white/white-blue light emission after successive thermal carbonization and oxidation by water vapor.
This material can be considered as a price-competitive solid-state white-light source. We examined
these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron
microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was
completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases
were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including
Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images
showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is
assumed that the strong light-emitting properties are controlled by the size and internal chemical
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white/white-blue light emission after successive thermal carbonization and oxidation by water vapor.
This material can be considered as a price-competitive solid-state white-light source. We examined
these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron
microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was
completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases
were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including
Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images
showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is
assumed that the strong light-emitting properties are controlled by the size and internal chemical
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white/white-blue light emission after successive thermal carbonization and oxidation by water vapor.
This material can be considered as a price-competitive solid-state white-light source. We examined
these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron
microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was
completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases
were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including
Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images
showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is
assumed that the strong light-emitting properties are controlled by the size and internal chemical
bonding states of carbon clusters incorporated.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.561-565.1127</doi><tpages>4</tpages></addata></record> |
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| title | Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon |
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