Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was conf...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2007-12, Vol.401, p.218-221
Hauptverfasser:	Yamashita, Yoshifumi, Sakamoto, Yoshifumi, Kamiura, Yoichi, Ishiyama, Takeshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Hydrogen Interface Resistivity reduction SiGe/Si
Online-Zugang:	Volltext
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