Defect-related photoluminescence in indium-implanted silicon

We measured photoluminescence (PL) spectra of In-implanted Si and observed a sharp line known as P-line and a broad band consisting of three emission bands. The dependence of the PL intensities on the annealing temperature and the excitation power density suggests that the interstitial In atoms are...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2007-12, Vol.401, p.134-137
Hauptverfasser:	Terashima, Koichi, Horikawa, Mitsuhiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Indium Photoluminescence Point defect clusters Silicon
Online-Zugang:	Volltext
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