Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat

A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current den...

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Veröffentlicht in:	Crystal research and technology (1979) 2007-12, Vol.42 (12), p.1271-1275
Hauptverfasser:	Wu, Gwo-Mei, Wu, Chen-Yen
Format:	Artikel
Sprache:	eng
Schlagworte:	Joule heating polycrystalline silicon thin film tungsten
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container_end_page	1275
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container_title	Crystal research and technology (1979)
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creator	Wu, Gwo-Mei Wu, Chen-Yen
description	A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv	10.1002/crat.200711017
format	Article
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A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. 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Res. Technol</addtitle><description>A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>Joule heating</subject><subject>polycrystalline</subject><subject>silicon thin film</subject><subject>tungsten</subject><issn>0232-1300</issn><issn>1521-4079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAUhS0EEuWxMntiS7mO4zgeacVLVEWCAqNxHKcY3KTYDlB-PamKEBvLPXc43xk-hI4IDAlAeqK9isMUgBMChG-hAWEpSTLgYhsNIKVpQijALtoL4QUARJ6lA_Q09qsQlXP2S0XbNritcbDO6v6Nz7bBtXWLgMsV1p33pomJbapOmwq_tJ0z-Nn0WDPHXVhfhWPXzEM0_c678bpV8QDt1MoFc_iT--j-_Gw2vkwmNxdX49NJoikreMIEZFoDM6XiWoiyMjVVrCo1KMqA04ITXlNKqxIKwVghclrnmTKi5KYueUr30fFmd-nbt86EKBc2aOOcakzbBUkJISLLSV8cboratyF4U8ultwvlV5KAXIuUa5HyV2QPiA3wYZ1Z_dOW49vT2V822bC2l_L5yyr_KnNOOZOP0wtJi4e76WgE8pp-AzEwiHk</recordid><startdate>200712</startdate><enddate>200712</enddate><creator>Wu, Gwo-Mei</creator><creator>Wu, Chen-Yen</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200712</creationdate><title>Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat</title><author>Wu, Gwo-Mei ; Wu, Chen-Yen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3587-5904cc05eba7c99bdef3a5dbc0a350738717f333db089558963f64ae9b7efb723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Joule heating</topic><topic>polycrystalline</topic><topic>silicon thin film</topic><topic>tungsten</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Gwo-Mei</creatorcontrib><creatorcontrib>Wu, Chen-Yen</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Crystal research and technology (1979)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Gwo-Mei</au><au>Wu, Chen-Yen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat</atitle><jtitle>Crystal research and technology (1979)</jtitle><addtitle>Cryst. Res. Technol</addtitle><date>2007-12</date><risdate>2007</risdate><volume>42</volume><issue>12</issue><spage>1271</spage><epage>1275</epage><pages>1271-1275</pages><issn>0232-1300</issn><eissn>1521-4079</eissn><abstract>A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/crat.200711017</doi><tpages>5</tpages></addata></record>
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subjects	Joule heating polycrystalline silicon thin film tungsten
title	Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat
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