Characteristics of carbon nanotubes grown by mesh-inserted plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition (CVD) has the advantages of low temperature and vertical growth in synthesizing carbon nanotubes (CNTs), but has generally produced stubby CNTs, probably due to an ion bombardment effect. To suppress the ion bombardment, a metal mesh with the same electrical potential as that of the cathode was placed just above the substrate on the cathode. The anode was electrically grounded while the cathode and the mesh were both negatively biased, causing no plasma to occur below the mesh. The substrate was therefore separated from the plasma by the mesh so that the ion bombardment was suppressed. CNTs were grown on a 2 nm-thick Invar catalyst with different DC plasma powers of 0–112 W at 500 °C, 3.3 torr for 10 min, using C 2H 2 (28 sccm) and NH 3 (172 sccm). Compared to CNTs grown with no mesh, these CNTs showed smaller diameters and greater lengths. As the plasma power decreased, the CNTs grown with mesh were thinner and longer and resembled those grown at a higher temperature by thermal CVD. Etching these CNTs by N 2 plasma reduced their population density and considerably improved their field emission characteristics.