Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties

Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlle...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS nano 2024-09, Vol.18 (37), p.25625-25635
Hauptverfasser: Lee, Changwoo, Kim, Dasol, Lim, Hyeonwook, Seong, Yeonwoo, Kim, Hyunwook, Park, Ju Hwan, Yang, Dogeon, Shin, Hee Jun, Wuttig, Matthias, Choi, Byung Joon, Cho, Mann-Ho
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 25635
container_issue 37
container_start_page 25625
container_title ACS nano
container_volume 18
creator Lee, Changwoo
Kim, Dasol
Lim, Hyeonwook
Seong, Yeonwoo
Kim, Hyunwook
Park, Ju Hwan
Yang, Dogeon
Shin, Hee Jun
Wuttig, Matthias
Choi, Byung Joon
Cho, Mann-Ho
description Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron–phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.
doi_str_mv 10.1021/acsnano.4c06909
format Article
fullrecord <record><control><sourceid>proquest_acs_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_3100273636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3100273636</sourcerecordid><originalsourceid>FETCH-LOGICAL-a696-1e496250893215e79098e2055352bbb2704cc09736454d3602c037f0e78bdab3</originalsourceid><addsrcrecordid>eNo9kEFLAzEQhYMoqNWz1xwFWZ0km-zu0RatglBhK3hbstmpTdkmNckK_gb_tFssMoc3hzePeR8hVwxuGXB2p0102vnb3ICqoDoiZ6wSKoNSvR__75KdkvMYNwCyKAt1Rn7e-hT02n6saZ10a3ubvql2HV3sMOhkvaOvGFY-bLUzSK2jU5t1focdneMS7-qWL1HQehjtvU7JGoz03qwtfo2W9psute19sO6DTr3r9rpPr1MYTBqC7ulrGNNCshgvyMlK9xEvDzoh9ePDcvaUvSzmz7P7l0yrSmUM80pxCWUlOJNYjF1L5CClkLxtW15AbgxUhVC5zDuhgBsQxQqwKNtOt2JCrv9Sd8F_DhhTs7XRYN9rh36IjWAAfLweZ0Ju_qwj22bjh-DGtxoGzR54cwDeHICLXxq5dgA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3100273636</pqid></control><display><type>article</type><title>Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties</title><source>American Chemical Society Journals</source><creator>Lee, Changwoo ; Kim, Dasol ; Lim, Hyeonwook ; Seong, Yeonwoo ; Kim, Hyunwook ; Park, Ju Hwan ; Yang, Dogeon ; Shin, Hee Jun ; Wuttig, Matthias ; Choi, Byung Joon ; Cho, Mann-Ho</creator><creatorcontrib>Lee, Changwoo ; Kim, Dasol ; Lim, Hyeonwook ; Seong, Yeonwoo ; Kim, Hyunwook ; Park, Ju Hwan ; Yang, Dogeon ; Shin, Hee Jun ; Wuttig, Matthias ; Choi, Byung Joon ; Cho, Mann-Ho</creatorcontrib><description>Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron–phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.</description><identifier>ISSN: 1936-0851</identifier><identifier>ISSN: 1936-086X</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/acsnano.4c06909</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>ACS nano, 2024-09, Vol.18 (37), p.25625-25635</ispartof><rights>2024 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-5621-3676 ; 0000-0002-4088-132X ; 0000-0003-1498-1025</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsnano.4c06909$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsnano.4c06909$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,27055,27903,27904,56717,56767</link.rule.ids></links><search><creatorcontrib>Lee, Changwoo</creatorcontrib><creatorcontrib>Kim, Dasol</creatorcontrib><creatorcontrib>Lim, Hyeonwook</creatorcontrib><creatorcontrib>Seong, Yeonwoo</creatorcontrib><creatorcontrib>Kim, Hyunwook</creatorcontrib><creatorcontrib>Park, Ju Hwan</creatorcontrib><creatorcontrib>Yang, Dogeon</creatorcontrib><creatorcontrib>Shin, Hee Jun</creatorcontrib><creatorcontrib>Wuttig, Matthias</creatorcontrib><creatorcontrib>Choi, Byung Joon</creatorcontrib><creatorcontrib>Cho, Mann-Ho</creatorcontrib><title>Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron–phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.</description><issn>1936-0851</issn><issn>1936-086X</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLAzEQhYMoqNWz1xwFWZ0km-zu0RatglBhK3hbstmpTdkmNckK_gb_tFssMoc3hzePeR8hVwxuGXB2p0102vnb3ICqoDoiZ6wSKoNSvR__75KdkvMYNwCyKAt1Rn7e-hT02n6saZ10a3ubvql2HV3sMOhkvaOvGFY-bLUzSK2jU5t1focdneMS7-qWL1HQehjtvU7JGoz03qwtfo2W9psute19sO6DTr3r9rpPr1MYTBqC7ulrGNNCshgvyMlK9xEvDzoh9ePDcvaUvSzmz7P7l0yrSmUM80pxCWUlOJNYjF1L5CClkLxtW15AbgxUhVC5zDuhgBsQxQqwKNtOt2JCrv9Sd8F_DhhTs7XRYN9rh36IjWAAfLweZ0Ju_qwj22bjh-DGtxoGzR54cwDeHICLXxq5dgA</recordid><startdate>20240917</startdate><enddate>20240917</enddate><creator>Lee, Changwoo</creator><creator>Kim, Dasol</creator><creator>Lim, Hyeonwook</creator><creator>Seong, Yeonwoo</creator><creator>Kim, Hyunwook</creator><creator>Park, Ju Hwan</creator><creator>Yang, Dogeon</creator><creator>Shin, Hee Jun</creator><creator>Wuttig, Matthias</creator><creator>Choi, Byung Joon</creator><creator>Cho, Mann-Ho</creator><general>American Chemical Society</general><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-5621-3676</orcidid><orcidid>https://orcid.org/0000-0002-4088-132X</orcidid><orcidid>https://orcid.org/0000-0003-1498-1025</orcidid></search><sort><creationdate>20240917</creationdate><title>Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties</title><author>Lee, Changwoo ; Kim, Dasol ; Lim, Hyeonwook ; Seong, Yeonwoo ; Kim, Hyunwook ; Park, Ju Hwan ; Yang, Dogeon ; Shin, Hee Jun ; Wuttig, Matthias ; Choi, Byung Joon ; Cho, Mann-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a696-1e496250893215e79098e2055352bbb2704cc09736454d3602c037f0e78bdab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Changwoo</creatorcontrib><creatorcontrib>Kim, Dasol</creatorcontrib><creatorcontrib>Lim, Hyeonwook</creatorcontrib><creatorcontrib>Seong, Yeonwoo</creatorcontrib><creatorcontrib>Kim, Hyunwook</creatorcontrib><creatorcontrib>Park, Ju Hwan</creatorcontrib><creatorcontrib>Yang, Dogeon</creatorcontrib><creatorcontrib>Shin, Hee Jun</creatorcontrib><creatorcontrib>Wuttig, Matthias</creatorcontrib><creatorcontrib>Choi, Byung Joon</creatorcontrib><creatorcontrib>Cho, Mann-Ho</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Changwoo</au><au>Kim, Dasol</au><au>Lim, Hyeonwook</au><au>Seong, Yeonwoo</au><au>Kim, Hyunwook</au><au>Park, Ju Hwan</au><au>Yang, Dogeon</au><au>Shin, Hee Jun</au><au>Wuttig, Matthias</au><au>Choi, Byung Joon</au><au>Cho, Mann-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2024-09-17</date><risdate>2024</risdate><volume>18</volume><issue>37</issue><spage>25625</spage><epage>25635</epage><pages>25625-25635</pages><issn>1936-0851</issn><issn>1936-086X</issn><eissn>1936-086X</eissn><abstract>Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron–phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsnano.4c06909</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-5621-3676</orcidid><orcidid>https://orcid.org/0000-0002-4088-132X</orcidid><orcidid>https://orcid.org/0000-0003-1498-1025</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1936-0851
ispartof ACS nano, 2024-09, Vol.18 (37), p.25625-25635
issn 1936-0851
1936-086X
1936-086X
language eng
recordid cdi_proquest_miscellaneous_3100273636
source American Chemical Society Journals
title Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T08%3A16%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_acs_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultrahigh%20Stability%20and%20Operation%20Performance%20in%20Bi-doped%20GeTe/Sb2Te3%20Superlattices%20Achieved%20by%20Tailoring%20Bonding%20and%20Structural%20Properties&rft.jtitle=ACS%20nano&rft.au=Lee,%20Changwoo&rft.date=2024-09-17&rft.volume=18&rft.issue=37&rft.spage=25625&rft.epage=25635&rft.pages=25625-25635&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/acsnano.4c06909&rft_dat=%3Cproquest_acs_j%3E3100273636%3C/proquest_acs_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3100273636&rft_id=info:pmid/&rfr_iscdi=true