Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays
Controlling the random lasing action from disordered media is important to obtain customizable lasers with unprecedented properties. In this paper, systematic investigations of random scattering based on GaAs/AlGaAs axial heterostructure nanowire (NW) arrays are presented. By manipulating the diamet...
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| Veröffentlicht in: | Nanoscale 2024-09, Vol.16 (37), p.17488-17494 |
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| creator | Meng, Bingheng Zhang, Xuanyu Kang, Yubin Yu, Xuanchi Wang, Puning Wang, Shan Tang, Jilong Hao, Qun Wei, Zhipeng Chen, Rui |
| description | Controlling the random lasing action from disordered media is important to obtain customizable lasers with unprecedented properties. In this paper, systematic investigations of random scattering based on GaAs/AlGaAs axial heterostructure nanowire (NW) arrays are presented. By manipulating the diameter and density of GaAs/AlGaAs axial heterostructure NWs during growth, different types of random lasers (Anderson localized and delocalized random lasers) have been successfully realized. The threshold,
Q
factor, and spatial coherence of these two types of lasers are experimentally discussed and analyzed. Finally, a proof-of-concept demonstration of speckle-free imaging based on the NW lasers has been conducted. This research enables the tunability of random lasers with exceptional performance and lays the foundation for achieving random lasing control.
Anderson localized and delocalized random lasers have been realized by controlling the diameter and density of GaAs/AlGaAs axial heterostructure nanowire arrays, which establishes the foundational basis for the control of random lasing. |
| doi_str_mv | 10.1039/d4nr02734e |
| format | Article |
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Q
factor, and spatial coherence of these two types of lasers are experimentally discussed and analyzed. Finally, a proof-of-concept demonstration of speckle-free imaging based on the NW lasers has been conducted. This research enables the tunability of random lasers with exceptional performance and lays the foundation for achieving random lasing control.
Anderson localized and delocalized random lasers have been realized by controlling the diameter and density of GaAs/AlGaAs axial heterostructure nanowire arrays, which establishes the foundational basis for the control of random lasing.</description><identifier>ISSN: 2040-3364</identifier><identifier>ISSN: 2040-3372</identifier><identifier>EISSN: 2040-3372</identifier><identifier>DOI: 10.1039/d4nr02734e</identifier><identifier>PMID: 39224054</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Aluminum gallium arsenides ; Gallium arsenide ; Heterostructures ; Laser arrays ; Lasers ; Lasing ; Nanowires</subject><ispartof>Nanoscale, 2024-09, Vol.16 (37), p.17488-17494</ispartof><rights>Copyright Royal Society of Chemistry 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c226t-1aca664810139ceb8af837a0e4c687d9cdc59406bce76f5d1dd5c1cb85bb03c93</cites><orcidid>0000-0002-0445-7847 ; 0000-0002-2926-8065 ; 0000-0002-0492-9365</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39224054$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Meng, Bingheng</creatorcontrib><creatorcontrib>Zhang, Xuanyu</creatorcontrib><creatorcontrib>Kang, Yubin</creatorcontrib><creatorcontrib>Yu, Xuanchi</creatorcontrib><creatorcontrib>Wang, Puning</creatorcontrib><creatorcontrib>Wang, Shan</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Hao, Qun</creatorcontrib><creatorcontrib>Wei, Zhipeng</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><title>Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays</title><title>Nanoscale</title><addtitle>Nanoscale</addtitle><description>Controlling the random lasing action from disordered media is important to obtain customizable lasers with unprecedented properties. In this paper, systematic investigations of random scattering based on GaAs/AlGaAs axial heterostructure nanowire (NW) arrays are presented. By manipulating the diameter and density of GaAs/AlGaAs axial heterostructure NWs during growth, different types of random lasers (Anderson localized and delocalized random lasers) have been successfully realized. The threshold,
Q
factor, and spatial coherence of these two types of lasers are experimentally discussed and analyzed. Finally, a proof-of-concept demonstration of speckle-free imaging based on the NW lasers has been conducted. This research enables the tunability of random lasers with exceptional performance and lays the foundation for achieving random lasing control.
Anderson localized and delocalized random lasers have been realized by controlling the diameter and density of GaAs/AlGaAs axial heterostructure nanowire arrays, which establishes the foundational basis for the control of random lasing.</description><subject>Aluminum gallium arsenides</subject><subject>Gallium arsenide</subject><subject>Heterostructures</subject><subject>Laser arrays</subject><subject>Lasers</subject><subject>Lasing</subject><subject>Nanowires</subject><issn>2040-3364</issn><issn>2040-3372</issn><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpdkUFLwzAUgIMobk4v3pWCFxHqkiZN2-OYcwqiIHryUNIkdR1pMpMU3b83dXOCh8d7vPfxePkCwCmC1wjiYiyItjDJMJF7YJhAAmOMs2R_V1MyAEfOLSGkBab4EAxwkSQEpmQI3qZGe2uUavR75BcyskwL00aKub7DuG-MjmobWnM2ceOJ6lPEvhqmooX00hrnbcd9Z2WkmTafTSiYtWztjsFBzZSTJ9s8Aq-3s5fpXfzwNL-fTh5iniTUx4hxRinJEUS44LLKWZ3jjEFJOM0zUXDB04JAWnGZ0ToVSIiUI17laVVBzAs8ApebvStrPjrpfNk2jkulmJamcyVGsNeThhiBi3_o0nRWh-t6qqAkDWYCdbWheHids7IuV7ZpmV2XCJa98vKGPD7_KJ8F-Hy7sqtaKXbor-MAnG0A6_hu-vdn-BsLeIYp</recordid><startdate>20240926</startdate><enddate>20240926</enddate><creator>Meng, Bingheng</creator><creator>Zhang, Xuanyu</creator><creator>Kang, Yubin</creator><creator>Yu, Xuanchi</creator><creator>Wang, Puning</creator><creator>Wang, Shan</creator><creator>Tang, Jilong</creator><creator>Hao, Qun</creator><creator>Wei, Zhipeng</creator><creator>Chen, Rui</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-0445-7847</orcidid><orcidid>https://orcid.org/0000-0002-2926-8065</orcidid><orcidid>https://orcid.org/0000-0002-0492-9365</orcidid></search><sort><creationdate>20240926</creationdate><title>Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays</title><author>Meng, Bingheng ; Zhang, Xuanyu ; Kang, Yubin ; Yu, Xuanchi ; Wang, Puning ; Wang, Shan ; Tang, Jilong ; Hao, Qun ; Wei, Zhipeng ; Chen, Rui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c226t-1aca664810139ceb8af837a0e4c687d9cdc59406bce76f5d1dd5c1cb85bb03c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum gallium arsenides</topic><topic>Gallium arsenide</topic><topic>Heterostructures</topic><topic>Laser arrays</topic><topic>Lasers</topic><topic>Lasing</topic><topic>Nanowires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meng, Bingheng</creatorcontrib><creatorcontrib>Zhang, Xuanyu</creatorcontrib><creatorcontrib>Kang, Yubin</creatorcontrib><creatorcontrib>Yu, Xuanchi</creatorcontrib><creatorcontrib>Wang, Puning</creatorcontrib><creatorcontrib>Wang, Shan</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Hao, Qun</creatorcontrib><creatorcontrib>Wei, Zhipeng</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meng, Bingheng</au><au>Zhang, Xuanyu</au><au>Kang, Yubin</au><au>Yu, Xuanchi</au><au>Wang, Puning</au><au>Wang, Shan</au><au>Tang, Jilong</au><au>Hao, Qun</au><au>Wei, Zhipeng</au><au>Chen, Rui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays</atitle><jtitle>Nanoscale</jtitle><addtitle>Nanoscale</addtitle><date>2024-09-26</date><risdate>2024</risdate><volume>16</volume><issue>37</issue><spage>17488</spage><epage>17494</epage><pages>17488-17494</pages><issn>2040-3364</issn><issn>2040-3372</issn><eissn>2040-3372</eissn><abstract>Controlling the random lasing action from disordered media is important to obtain customizable lasers with unprecedented properties. In this paper, systematic investigations of random scattering based on GaAs/AlGaAs axial heterostructure nanowire (NW) arrays are presented. By manipulating the diameter and density of GaAs/AlGaAs axial heterostructure NWs during growth, different types of random lasers (Anderson localized and delocalized random lasers) have been successfully realized. The threshold,
Q
factor, and spatial coherence of these two types of lasers are experimentally discussed and analyzed. Finally, a proof-of-concept demonstration of speckle-free imaging based on the NW lasers has been conducted. This research enables the tunability of random lasers with exceptional performance and lays the foundation for achieving random lasing control.
Anderson localized and delocalized random lasers have been realized by controlling the diameter and density of GaAs/AlGaAs axial heterostructure nanowire arrays, which establishes the foundational basis for the control of random lasing.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>39224054</pmid><doi>10.1039/d4nr02734e</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-0445-7847</orcidid><orcidid>https://orcid.org/0000-0002-2926-8065</orcidid><orcidid>https://orcid.org/0000-0002-0492-9365</orcidid></addata></record> |
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| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Aluminum gallium arsenides Gallium arsenide Heterostructures Laser arrays Lasers Lasing Nanowires |
| title | Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays |
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